公开(公告)号：US20180254316A1

公开(公告)日：2018-09-06

申请号：US15622080

申请日：2017-06-14

申请人： Powerchip Technology Corporation

发明人： Hsin Tai ,  Po-Cheng Chang ,  Hui-Chin Huang ,  Pei-Ting Tou ,  Ming-Chen Lu

IPC分类号： H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L28/60 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32136

摘要： The invention provides a manufacturing method of a metal-insulator-metal device, including: forming a first metal layer, an insulation layer, and a second metal layer sequentially on a base to form a metal-insulator-metal structure; forming a patterned mask layer on at least a portion of the second metal layer, etching the second metal layer and the insulation layer on which the patterned mask layer is not formed using an etchant without carbon; and cleaning the etched metal-insulator-metal structure using a mixed solution containing oxidants and metal oxide etchants to remove excess polymer remaining on the metal-insulator-metal structure.

公开(公告)号：US20160111295A1

公开(公告)日：2016-04-21

申请号：US14566721

申请日：2014-12-11

申请人： Powerchip Technology Corporation

发明人： Kai-Yao Shih ,  Ssu-Ting Wang ,  Te-Yuan Yin ,  Po-Cheng Chang ,  Hsin Tai

IPC分类号： H01L21/311 ,  H01L21/308

CPC分类号： H01L21/823462 ,  H01L27/11546

摘要： A method for fabricating a semiconductor device is provided. The method includes the following steps. A substrate including a memory cell region and a peripheral region is provided, and a plurality of isolation structures are formed in the substrate. Each of the isolation structures contains an exposed portion protruding beyond the surface of the substrate. A first dielectric layer is formed on the substrate. A protective layer is formed on a sidewall of the exposed portion of each of the isolation structures. The first dielectric layer on the peripheral region is removed. A second dielectric layer is formed on the substrate of the peripheral region.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤。 提供了包括存储单元区域和周边区域的基板，并且在基板中形成多个隔离结构。 每个隔离结构都包含突出超过衬底表面的暴露部分。 在基板上形成第一电介质层。 在每个隔离结构的暴露部分的侧壁上形成保护层。 去除外围区域上的第一介电层。 在周边区域的基板上形成第二电介质层。