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公开(公告)号：US09770783B2
公开(公告)日：2017-09-26
申请号：US14814892
申请日：2015-07-31
CPC分类号： B23K26/0892 , B23K26/04 , B23K26/048 , B23K26/0884 , G01B9/02091 , G01B11/14
摘要： According to a method for measuring the distance between a workpiece and a machining head of a laser machining apparatus, a machining head is provided, which has a housing that has an interior and an opening for emergence of the laser radiation from the machining head. The laser radiation is directed on to the workpiece, after it has passed through the interior and the opening. An object beam is directed on to the workpiece by a light source of an optical coherence tomograph in such a manner that the object beam passes through the interior and the opening before being incident upon the workpiece. In addition to the object beam, a measuring beam passes through the interior. The measuring beam is used to compensate falsifications of the measured distance that have been caused by pressure fluctuations in the interior. The measuring beam in this case may be reflected at a reflective face that is formed on an inner face of an outlet nozzle that comprises the opening, which inner face delimits the interior.
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2.发明申请Method for Measuring the Distance Between a Workpiece and a Machining Head of a Laser Machining Apparatus 有权用于测量激光加工设备的工件和加工头之间的距离的方法公开(公告)号：US20160059350A1
公开(公告)日：2016-03-03
申请号：US14814892
申请日：2015-07-31
CPC分类号： B23K26/0892 , B23K26/04 , B23K26/048 , B23K26/0884 , G01B9/02091 , G01B11/14
摘要： According to a method for measuring the distance between a workpiece and a machining head of a laser machining apparatus, a machining head is provided, which has a housing that has an interior and an opening for emergence of the laser radiation from the machining head. The laser radiation is directed on to the workpiece, after it has passed through the interior and the opening. An object beam is directed on to the workpiece by a light source of an optical coherence tomograph in such a manner that the object beam passes through the interior and the opening before being incident upon the workpiece. In addition to the object beam, a measuring beam passes through the interior. The measuring beam is used to compensate falsifications of the measured distance that have been caused by pressure fluctuations in the interior. The measuring beam in this case may be reflected at a reflective face that is formed on an inner face of an outlet nozzle that comprises the opening, which inner face delimits the interior.
摘要翻译： 根据用于测量激光加工装置的工件和加工头之间的距离的方法，提供了一种加工头，其具有壳体，该壳体具有用于从加工头出射激光辐射的内部和开口。 在穿过内部和开口之后，激光辐射被引导到工件上。 物镜光束通过光学相干断层摄影机的光源被引导到工件上，使得物体光束在入射到工件之前穿过内部和开口。 除了物体光束之外，测量光束通过内部。 测量光束用于补偿由内部压力波动引起的测量距离的伪造。 在这种情况下的测量光束可以在形成在包括开口的出口喷嘴的内表面上的反射面上反射，该内表面限定在内部。
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3.发明授权Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer 有权用高度掺杂层监测硅晶片的厚度的装置和方法公开(公告)号：US09230817B2
公开(公告)日：2016-01-05
申请号：US14198566
申请日：2014-03-05
CPC分类号： H01L21/304 , B24B49/12 , G01B9/00 , G01B11/0675 , G01B11/0683 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength wc.
摘要翻译： 提供了用于至少在硅晶片背面监测具有高掺杂层的硅晶片厚度的装置。 该装置具有被配置为发射多个波长的相干光的源。 此外，该装置包括测量头，其被配置为与硅晶片相邻地非接触地定位，并被配置为用相干光照射至少一部分硅晶片并且接收由硅晶片反射的辐射的至少一部分。 另外，该装置包括光谱仪，分束器和评估装置。 评估装置被配置为通过光学相干断层摄影处理来分析由硅晶片反射的辐射来确定硅晶片的厚度。 相干光在围绕中心波长wc的带宽b中发射多个波长。
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4.发明申请Apparatus and Method for Monitoring a Thickness of a Silicon Wafer with a Highly Doped Layer 审中-公开用于监测具有高掺杂层的硅晶片的厚度的装置和方法公开(公告)号：US20140315333A1
公开(公告)日：2014-10-23
申请号：US14198566
申请日：2014-03-05
IPC分类号： H01L21/66 , H01L21/304 , G01B9/00
CPC分类号： H01L21/304 , B24B49/12 , G01B9/00 , G01B11/0675 , G01B11/0683 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength wc.
摘要翻译： 提供了用于至少在硅晶片背面监测具有高掺杂层的硅晶片厚度的装置。 该装置具有被配置为发射多个波长的相干光的源。 此外，该装置包括测量头，其被配置为与硅晶片相邻地非接触地定位，并被配置为用相干光照射至少一部分硅晶片并且接收由硅晶片反射的辐射的至少一部分。 另外，该装置包括光谱仪，分束器和评估装置。 评估装置被配置为通过光学相干断层摄影处理来分析由硅晶片反射的辐射来确定硅晶片的厚度。 相干光在围绕中心波长wc的带宽b中发射多个波长。
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