公开(公告)号：US20020096494A1

公开(公告)日：2002-07-25

申请号：US09768523

申请日：2001-01-24

Applicant: ProMOS Technologies Inc.

Inventor： Hungyueh Lu ,  Hong-Long Chang ,  Fang-Fei Liu

IPC: B44C001/22 ,  C23F001/00

CPC classification number: H01L21/02063 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814

Abstract: A post-cleaning method of a via etching process in the present invention has the steps of: (a) performing a photoresist strip process to remove the photoresist layer; b) performing a dry cleaning process which uses CF4 as the main reactive gas and is operated by dual powers; and (c) performing a water-rinsing process.

Abstract translation: 本发明的通孔蚀刻工艺的后清洗方法具有以下步骤：（a）进行光致抗蚀剂剥离处理以除去光致抗蚀剂层; b）进行使用CF4作为主要反应气体并由双重功率运行的干洗过程; 和（c）进行水冲洗处理。

公开(公告)号：US20030104697A1

公开(公告)日：2003-06-05

申请号：US10339157

申请日：2003-01-09

Applicant: Promos Technologies, Inc.

Inventor： Hong-Long Chang ,  Ming-Li Kung ,  Hungyueh Lu ,  Fang-Fei Liu

IPC: C25F001/00 ,  C25F003/30 ,  C25F005/00 ,  B08B006/00 ,  B08B003/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02071 ,  H01L21/32136 ,  Y10S134/902 ,  Y10S438/906

Abstract: A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.

Abstract translation: 一种用于半导体制造的干洗方法，包括以下步骤。 提供蚀刻的金属化结构并将其放置在处理室中。 通过在邻近蚀刻的金属化结构的情况下将含氟气体/含氧气体混合物引入处理室而不使用下游微波同时在蚀刻的金属化结构附近施加磁场并保持小于等于的压力来清洁蚀刻的金属化结构 约50毫托在处理室内预定的时间。