公开(公告)号：US08558619B2

公开(公告)日：2013-10-15

申请号：US13733889

申请日：2013-01-04

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Andrew J. Robison

IPC: H03F3/16

CPC classification number: H03F3/426 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

Abstract: Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.

Abstract translation: 公开了功率放大器的说明性实施例。 在一个实施例中，功率放大器包括形成在绝缘体上硅（SOI）衬底上的多个晶体管，使得多个晶体管在SOI衬底内彼此电隔离。 功率放大器还包括多个偏置网络，每个偏置网络被配置为动态地偏置多个晶体管中的至少一个。 多个晶体管以串联堆叠电耦合，功率放大器的输出跨越串联堆叠提供。

公开(公告)号：US20130120065A1

公开(公告)日：2013-05-16

申请号：US13733889

申请日：2013-01-04

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Andrew J. Robison

IPC: H03F3/16

CPC classification number: H03F3/426 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

Abstract: Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.

Abstract translation: 公开了功率放大器的说明性实施例。 在一个实施例中，功率放大器包括形成在绝缘体上硅（SOI）衬底上的多个晶体管，使得多个晶体管在SOI衬底内彼此电隔离。 功率放大器还包括多个偏置网络，每个偏置网络被配置为动态地偏置多个晶体管中的至少一个。 多个晶体管以串联堆叠电耦合，功率放大器的输出跨越串联堆叠提供。