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公开(公告)号：US20180302038A1
公开(公告)日：2018-10-18
申请号：US15488615
申请日：2017-04-17
申请人： GLOBALFOUNDRIES INC.
IPC分类号： H03F1/02 , H03F3/21 , H03F3/45 , H01L29/786
CPC分类号： H01L29/78603 , H01L29/78648 , H03F1/0277 , H03F1/223 , H03F3/195 , H03F3/245 , H03F3/45179 , H03F3/72 , H03F2200/451 , H03F2200/511 , H03F2203/45112 , H03F2203/45228 , H03F2203/45342 , H03F2203/45394 , H03F2203/45731
摘要： Embodiments of the present disclosure provide a circuit structure and method for power amplifier control with forward and reverse voltage biases to transistor back-gate regions. A circuit structure according to the disclosure can include: a power amplifier (PA) circuit having first and second transistors, the first and second transistors each including a back-gate region, wherein the back-gate region of each of the first and second transistors is positioned within a doped substrate separated from a semiconductor region by a buried insulator layer; and an analog voltage source coupled to the back-gate regions of the first and second transistors of the PA circuit, such that the analog voltage source alternatively supplies a forward bias voltage or a reverse bias voltage to the back-gate regions of the first and second transistors of the PA circuit to produce a continuously sloped power ramping profile.
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公开(公告)号：US20180278222A1
公开(公告)日：2018-09-27
申请号：US15911606
申请日：2018-03-05
发明人： TAKAYUKI ABE
CPC分类号： H03F3/45264 , H03F1/0216 , H03F1/347 , H03F1/56 , H03F3/195 , H03F3/3098 , H03F3/45179 , H03F2200/222 , H03F2200/387 , H03F2203/45318 , H03F2203/45332 , H03F2203/45394
摘要： A power amplification circuit includes a first transistor, which includes a source coupled to a first power supply and receives an input signal at a gate of the first transistor, a capacitor, which includes a first terminal and a second terminal, the first terminal being coupled to a drain of the first transistor, and a transformer, which is coupled between the second terminal and the gate of the first transistor, transforms a first signal input from the second terminal, and outputs a second signal having a phase different from a phase of the first signal to the gate of the first transistor. The first transistor outputs an output signal from the drain of the first transistor.
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3.发明申请公开(公告)号：US20180278219A1
公开(公告)日：2018-09-27
申请号：US15890917
申请日：2018-02-07
发明人： TAKAYUKI ABE
CPC分类号： H03F1/565 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/45179 , H03F3/45475 , H03F2200/387 , H03F2200/451 , H03F2203/21139 , H03F2203/45394 , H03F2203/45621
摘要： A power amplification division circuit includes a conversion element having a one-turn annular first inductor and an N-turn annular second inductor in a shape along a portion of the first inductor and converting an input signal into positive and negative phase signals, a first transistor in which a source is connected with a third power source and a gate receives the positive signal, a second transistor in which a source is connected with a fourth power source and a gate receives the negative phase signal, a first impedance circuit connected between the gate of the first transistor and a drain of the second transistor, a second impedance circuit connected between the gate of the second transistor and a drain of the first transistor, and an output matching circuit connected with the drains of the first and second transistors and outputting first and second divided signals.
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公开(公告)号：US20170257067A1
公开(公告)日：2017-09-07
申请号：US15409506
申请日：2017-01-18
发明人： TAKAYUKI ABE , JUNJI SATO
CPC分类号： H03F1/0205 , H03F1/14 , H03F3/193 , H03F3/21 , H03F3/45179 , H03F2200/21 , H03F2200/267 , H03F2200/451 , H03F2203/45318 , H03F2203/45394
摘要： A power amplifier circuit includes an input that receives a first input signal having a first phase and a second input signal having a second phase, a first transistor that includes a source that is supplied with a first voltage, and a gate that receives the first input signal, a second transistor that includes a source that is supplied with the first voltage, and a gate that receives the second input signal, a first neutralizing circuit that neutralizes a parasitic element, a second neutralizing circuit that neutralizes a parasitic element, N third transistors, N being an integer equal to or higher that 1, N fourth transistors, and an output that is connected between a drain of the N-th third transistor and a drain of the N-th fourth transistor and outputs a first output signal having a third phase and a second output signal having a fourth phase.
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5.发明申请公开(公告)号：US20170104573A1
公开(公告)日：2017-04-13
申请号：US15142077
申请日：2016-04-29
发明人： David Ryan
CPC分类号： H04L5/14 , H03F1/565 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/45179 , H03F2200/294 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2203/45394 , H04B1/40 , H04B1/525
摘要： An apparatus includes a first gain stage, a combiner and a second gain stage. The first gain stage may be configured to amplify a receive signal acquired from a circuit to generate an intermediate signal. The combiner may be configured to combine the intermediate signal with a cancellation signal to generate a combined signal. The cancellation signal is generally derived from a transmit signal a portion of which appears in the receive signal through the circuit. The second gain stage may be configured to amplify the combined signal to generate an output signal.
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公开(公告)号：US20160173033A1
公开(公告)日：2016-06-16
申请号：US14572752
申请日：2014-12-16
申请人： MEDIATEK INC.
发明人： Wen-Hua Chang
CPC分类号： H03F1/0205 , H03F1/56 , H03F3/45076 , H03F3/45179 , H03F3/45273 , H03F3/45475 , H03F2200/91 , H03F2203/45116 , H03F2203/45336 , H03F2203/45392 , H03F2203/45394 , H03F2203/45528
摘要： A line driver and a method for driving a load are proposed. The line driver includes a current amplifier and a feedback network. The current amplifier has an input node arranged to receive an input current of the line driver, and an output node arranged to produce an output current. The feedback network is coupled between the input node and the output node of the current amplifier, wherein a portion of the output current of the line driver is guided to the feedback network, and an equivalent impedance obtained by looking into the output node of the current amplifier with the feedback network substantially equals an impedance of the load.
摘要翻译： 提出了线驱动器和驱动负载的方法。 线路驱动器包括电流放大器和反馈网络。 电流放大器具有布置成接收线路驱动器的输入电流的输入节点和布置成产生输出电流的输出节点。 反馈网络耦合在电流放大器的输入节点和输出节点之间，其中线路驱动器的输出电流的一部分被引导到反馈网络，并且通过查看电流的输出节点获得的等效阻抗 具有反馈网络的放大器基本上等于负载的阻抗。
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公开(公告)号：US09362866B2
公开(公告)日：2016-06-07
申请号：US14100931
申请日：2013-12-09
申请人： Broadcom Corporation
发明人： Debopriyo Chowdhury , Ali Afsahi
IPC分类号： H04K1/02 , H04L25/03 , H04L25/49 , H03F1/02 , H03F1/22 , H03F1/32 , H03F3/195 , H03F3/24 , H03F3/45
CPC分类号： H03F1/0227 , H03F1/223 , H03F1/3223 , H03F3/195 , H03F3/24 , H03F3/45179 , H03F2200/336 , H03F2203/45394
摘要： A communication device, such as a smart phone, includes an envelope tracking power supply modulator. The envelope tracking power supply modulator receives an envelope tracking reference signal. A baseband controller pre-distorts the envelope tracking reference signal responsive to distortion caused by the envelope tracking power supply modulator. For instance, the pre-distortion may modify the nominal envelope tracking reference signal so that, after the modulator acts on the modified reference signal, the output of the modulator has increased linearity.
摘要翻译： 诸如智能电话的通信设备包括信封跟踪电源调制器。 信封跟踪电源调制器接收包络跟踪参考信号。 基带控制器响应于由包络跟踪电源调制器引起的失真来预失真包络跟踪参考信号。 例如，预失真可以修改标称包络跟踪参考信号，使得在调制器作用于修改的参考信号之后，调制器的输出具有增加的线性度。
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公开(公告)号：US20160156315A1
公开(公告)日：2016-06-02
申请号：US15016970
申请日：2016-02-05
申请人： SOCIONEXT INC.
发明人： Takafumi NASU , Shinichiro UEMURA , Atsushi OHARA
CPC分类号： H03F1/0205 , H03F1/3211 , H03F3/191 , H03F3/193 , H03F3/45179 , H03F3/45475 , H03F2200/294 , H03F2200/451 , H03F2203/45394 , H03F2203/45631 , H03F2203/45634 , H03F2203/45638 , H03F2203/45644 , H03F2203/45658 , H03F2203/45688 , H03F2203/45694 , H03F2203/45696 , H03F2203/45712 , H03F2203/45714 , H03F2203/45718 , H03F2203/45726 , H03H5/00 , H03H11/04 , H03J5/02 , H03J2200/10
摘要： A parallel resonant circuit with excellent distortion and saturation characteristics is provided at low power consumption. A first power-supply voltage is applied to the parallel resonant circuit. In the parallel resonant circuit, a variable resistor includes one or more parallel-connected branches. Each of the branches includes a series circuit of a resistor and a MOS switch. A second power supply supplies power of control signals applied to respective gates of the MOS switches, and supplies back gate voltages to the MOS switches. A power-supply voltage of the second power supply is higher than the first power-supply voltage.
摘要翻译： 在低功耗下提供具有优异失真和饱和特性的并联谐振电路。 第一电源电压被施加到并联谐振电路。 在并联谐振电路中，可变电阻器包括一个或多个并联连接的分支。 每个分支包括电阻器和MOS开关的串联电路。 第二电源提供施加到MOS开关的各个门的控制信号的电源，并向MOS开关提供反向栅极电压。 第二电源的电源电压高于第一电源电压。
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9.发明授权Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices 有权包括异质结双极晶体管（HBT）和互补金属氧化物半导体（CMOS）器件的混合功率放大器公开(公告)号：US09306514B2
公开(公告)日：2016-04-05
申请号：US14289597
申请日：2014-05-28
发明人： Young Kwon , David Bockelman , Marshall Maple , Joo Min Jung
CPC分类号： H03F3/211 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H03F1/0272 , H03F1/52 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/245 , H03F3/4508 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/405 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2200/555 , H03F2203/21139 , H03F2203/45394 , H03F2203/45544 , H03F2203/45591 , H03F2203/45594 , H03F2203/45596 , H01L2924/00014
摘要： A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.
摘要翻译： 异质结双极晶体管（HBT）混合型RF（射频）功率放大器包括：第一器件，包括用于接收RF信号的输入端，用于放大接收的RF信号的预驱动级;以及输出端; 所述预驱动器级和所述输出端设置在第一基板中或上方; 以及第二装置，其具有设置在第二基板中或上方的HBT放大器电路的主级，以进一步放大由预驱动器级放大的RF信号。 由主级进一步放大的RF信号通过第一装置的输出端输出。
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公开(公告)号：US09214904B2
公开(公告)日：2015-12-15
申请号：US14350078
申请日：2011-12-23
申请人： Chang Hyun Lee , Chang Kun Park
发明人： Chang Hyun Lee , Chang Kun Park
CPC分类号： H03F3/21 , H03F1/223 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/4508 , H03F3/45179 , H03F2200/451 , H03F2203/45318 , H03F2203/45364 , H03F2203/45394 , H03F2203/45562 , H03F2203/45638 , H03F2203/45644
摘要： Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.
摘要翻译： 公开了一种使用模式注入的差分功率放大器，其包括：栅极接收第一信号并且源极连接到地的第一晶体管; 栅极接收第二信号并且源极连接到地的第二晶体管; 源极连接到第一晶体管的源极的第三晶体管; 源极连接到第二晶体管的源极的第四晶体管; 源极与第一晶体管的漏极连接的第五晶体管，漏极与第三晶体管的第一输出端口和漏极连接; 以及第六晶体管，其源极与第二晶体管的漏极连接，漏极与第四晶体管的第二输出端口和漏极连接。
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