公开(公告)号：US20140203796A1

公开(公告)日：2014-07-24

申请号：US13968836

申请日：2013-08-16

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Hossein Pajouhi ,  Jeffrey Frederick Rhoads ,  Lin Yu

IPC: H01L27/12 ,  G01R19/00 ,  H01L29/02

CPC classification number: H01L27/1203 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/775 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A silicon device, e.g., a nanoelectromechanical resonator, has a silicon substrate; an oxide layer having a trench therein; a silicon device layer over the oxide layer; and a nanowire disposed at least partly over the trench. Substantially no oxide or polysilicon is over the nanowire in the trench. A polyimide layer over the silicon device layer includes an opening over the trench. A silicon device can include silicon-on-insulator layers and at least one complementary metal-oxide semiconductor transistor in addition to a nanowire substantially suspended over a trench. A system for measurement of a nanoresonator includes an AC source in series with the nanoresonator to provide an electrical signal thereto at a selected first frequency. Electrode(s) adjacent to and spaced apart from the nanoresonator are driven by voltage source. A detector detects a current through the nanoresonator.

Abstract translation: 硅器件，例如纳米机电谐振器，具有硅衬底; 其中具有沟槽的氧化物层; 氧化物层上的硅器件层; 以及至少部分地布置在沟槽上的纳米线。 在沟槽中的纳米线上基本上没有氧化物或多晶硅。 硅器件层上的聚酰亚胺层包括在沟槽上的开口。 除了基本上悬在沟槽上的纳米线之外，硅器件可以包括绝缘体上硅层和至少一个互补金属氧化物半导体晶体管。 纳米谐振器的测量系统包括与纳米谐振器串联的AC源，以选定的第一频率向其提供电信号。 与纳米谐振器相邻并间隔开的电极由电压源驱动。 检测器检测通过纳米谐振器的电流。