公开(公告)号：US20150083597A1

公开(公告)日：2015-03-26

申请号：US14497864

申请日：2014-09-26

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Mojgan Sarmadi ,  Hossein Pajouhi

IPC: G01N27/414 ,  G01N33/487

CPC classification number: G01N27/4145 ,  G01N33/48721

Abstract: A perforated metal oxide semiconductor (MOS) structure for single biomolecule, virus, or single cell detection is disclosed. The structure includes a nanochannel formed through a sensing region configured to allow a solution containing particles to pass through the perforated MOS sensor. First and second terminals are configured to measure electrical parameters representative of change of electrical characteristics of the solution as the particle passes through the perforated MOS structure.

Abstract translation: 公开了用于单一生物分子，病毒或单细胞检测的穿孔金属氧化物半导体（MOS）结构。 该结构包括通过感测区域形成的纳米通道，其被配置为允许含有颗粒的溶液通过穿孔的MOS传感器。 第一和第二端子被配置为测量代表当颗粒通过穿孔的MOS结构时溶液的电特性变化的电参数。

公开(公告)号：US09190269B2

公开(公告)日：2015-11-17

申请号：US13797111

申请日：2013-03-12

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Hossein Pajouhi

IPC: H03F3/16 ,  H03F3/14 ,  H01L21/02 ,  H03F3/21 ,  H03F3/42 ,  H03F3/45 ,  H03F1/02 ,  H01L27/12

CPC classification number: H01L21/0254 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/426 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

Abstract: Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate.

Abstract translation: 公开了功率放大器和相关方法的说明性实施例。 在至少一个实施例中，一种方法可以包括在绝缘体上硅（SOI）衬底的第一硅层中制造功率放大器，其中SOI衬底包括第一硅层，第二硅层和掩埋氧化物 层，设置在第一和第二硅层之间; 在制造功率放大器之后，从SOI衬底去除至少一些第二硅层; 以及在将至少一些所述第二硅层去除之后将所述SOI衬底固定到非导电和导热的基底上。

公开(公告)号：US20180306770A1

公开(公告)日：2018-10-25

申请号：US15815700

申请日：2017-11-16

Applicant: Purdue Research Foundation

Inventor： Hossein Pajouhi ,  Saeed Mohammadi ,  Mojgan Sarmadi

IPC: G01N33/483 ,  H01L23/528 ,  H01L27/12 ,  H01L23/66 ,  H01L21/84 ,  H01L21/3213 ,  H01L21/768

CPC classification number: G01N33/4836 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/84 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/66 ,  H01L27/1203 ,  H01L2221/1094 ,  H01L2223/6677

Abstract: A biological sensing system, comprising a microelectrode array having a plurality of islands that are thermally isolated from each other and are interconnected by flexible nano-scale wires. An embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier and wireless communication circuitry may be operatively connected to the microelectrode array and embedded within input/output pads connected to the wires at the periphery of the array.

公开(公告)号：US20140203796A1

公开(公告)日：2014-07-24

申请号：US13968836

申请日：2013-08-16

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Hossein Pajouhi ,  Jeffrey Frederick Rhoads ,  Lin Yu

IPC: H01L27/12 ,  G01R19/00 ,  H01L29/02

CPC classification number: H01L27/1203 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/775 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A silicon device, e.g., a nanoelectromechanical resonator, has a silicon substrate; an oxide layer having a trench therein; a silicon device layer over the oxide layer; and a nanowire disposed at least partly over the trench. Substantially no oxide or polysilicon is over the nanowire in the trench. A polyimide layer over the silicon device layer includes an opening over the trench. A silicon device can include silicon-on-insulator layers and at least one complementary metal-oxide semiconductor transistor in addition to a nanowire substantially suspended over a trench. A system for measurement of a nanoresonator includes an AC source in series with the nanoresonator to provide an electrical signal thereto at a selected first frequency. Electrode(s) adjacent to and spaced apart from the nanoresonator are driven by voltage source. A detector detects a current through the nanoresonator.

Abstract translation: 硅器件，例如纳米机电谐振器，具有硅衬底; 其中具有沟槽的氧化物层; 氧化物层上的硅器件层; 以及至少部分地布置在沟槽上的纳米线。 在沟槽中的纳米线上基本上没有氧化物或多晶硅。 硅器件层上的聚酰亚胺层包括在沟槽上的开口。 除了基本上悬在沟槽上的纳米线之外，硅器件可以包括绝缘体上硅层和至少一个互补金属氧化物半导体晶体管。 纳米谐振器的测量系统包括与纳米谐振器串联的AC源，以选定的第一频率向其提供电信号。 与纳米谐振器相邻并间隔开的电极由电压源驱动。 检测器检测通过纳米谐振器的电流。

公开(公告)号：US20230400450A1

公开(公告)日：2023-12-14

申请号：US18134890

申请日：2023-04-14

Applicant: Purdue Research Foundation

Inventor： Hossein Pajouhi ,  Saeed Mohammadi ,  Mojgan Sarmadi

IPC: G01N33/483 ,  H01L23/528 ,  H01L27/12 ,  H01L23/66 ,  H01L21/84 ,  H01L21/3213 ,  H01L21/768

CPC classification number: G01N33/4836 ,  H01L23/5283 ,  H01L27/1203 ,  H01L23/66 ,  H01L21/84 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/32135 ,  H01L27/124 ,  H01L23/53228

Abstract: A biological sensing system, comprising a microelectrode array having a plurality of islands that are thermally isolated from each other and are interconnected by flexible nano-scale wires. An embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier and wireless communication circuitry may be operatively connected to the microelectrode array and embedded within input/output pads connected to the wires at the periphery of the array.

公开(公告)号：US09188563B2

公开(公告)日：2015-11-17

申请号：US14497864

申请日：2014-09-26

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Mojgan Sarmadi ,  Hossein Pajouhi

IPC: G01N27/414 ,  G01N33/487

CPC classification number: G01N27/4145 ,  G01N33/48721

Abstract: A perforated metal oxide semiconductor (MOS) structure for single biomolecule, virus, or single cell detection is disclosed. The structure includes a nanochannel formed through a sensing region configured to allow a solution containing particles to pass through the perforated MOS sensor. First and second terminals are configured to measure electrical parameters representative of change of electrical characteristics of the solution as the particle passes through the perforated MOS structure.

Abstract translation: 公开了用于单一生物分子，病毒或单细胞检测的穿孔金属氧化物半导体（MOS）结构。 该结构包括通过感测区域形成的纳米通道，其被配置为允许含有颗粒的溶液通过穿孔的MOS传感器。 第一和第二端子被配置为测量代表当颗粒通过穿孔的MOS结构时溶液的电特性变化的电参数。

公开(公告)号：US20130307626A1

公开(公告)日：2013-11-21

申请号：US13797111

申请日：2013-03-12

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Hossein Pajouhi

IPC: H01L21/02 ,  H03F3/21

CPC classification number: H01L21/0254 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/426 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

Abstract: Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate.

Abstract translation: 公开了功率放大器和相关方法的说明性实施例。 在至少一个实施例中，一种方法可以包括在绝缘体上硅（SOI）衬底的第一硅层中制造功率放大器，其中SOI衬底包括第一硅层，第二硅层和掩埋氧化物 层，设置在第一和第二硅层之间; 在制造功率放大器之后，从SOI衬底去除至少一些第二硅层; 以及在将至少一些所述第二硅层去除之后将所述SOI衬底固定到非导电和导热的基底上。