公开(公告)号：US20140134960A1

公开(公告)日：2014-05-15

申请号：US13677017

申请日：2012-11-14

Applicant: QUALCOMM INCORPORATED

Inventor： Aleksandar Miodrag Tasic ,  Anosh Bomi Davierwalla ,  Chiewcharn Narathong ,  Klaas van Zalinge

IPC: H04W88/02

CPC classification number: H04W88/02 ,  H03F3/193 ,  H03F3/68 ,  H04B1/0053

Abstract: Omni-band amplifiers supporting multiple band groups are disclosed. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes at least one gain transistor and a plurality of cascode transistors for a plurality of band groups. Each band group covers a plurality of bands. The gain transistor(s) receive an input radio frequency (RF) signal. The cascode transistors are coupled to the gain transistor(s) and provide an output RF signal for one of the plurality of band groups. In an exemplary design, the gain transistor(s) include a plurality of gain transistors for the plurality of band groups. One gain transistor and one cascode transistor are enabled to amplify the input RF signal and provide the output RF signal for the selected band group. The gain transistors may be coupled to different taps of a single source degeneration inductor or to different source degeneration inductors.

Abstract translation: 公开了支持多个频带组的全频带放大器。 在示例性设计中，装置（例如，无线装置，集成电路等）包括用于多个频带组的至少一个增益晶体管和多个共源共栅晶体管。 每个带组覆盖多个频带。 增益晶体管接收输入射频（RF）信号。 共源共栅晶体管耦合到增益晶体管，并为多个带组中的一个提供输出RF信号。 在示例性设计中，增益晶体管包括用于多个带组的多个增益晶体管。 一个增益晶体管和一个共源共栅晶体管能够放大输入RF信号并提供所选频带组的输出RF信号。 增益晶体管可以耦合到单个源极退化电感器的不同抽头或不同的源极退化电感器。

公开(公告)号：US09603187B2

公开(公告)日：2017-03-21

申请号：US13677017

申请日：2012-11-14

Applicant: QUALCOMM Incorporated

Inventor： Aleksandar Miodrag Tasic ,  Anosh Bomi Davierwalla ,  Chiewcharn Narathong ,  Klaas van Zalinge

IPC: H04W88/02 ,  H03F3/193 ,  H03F3/68 ,  H04B1/00

CPC classification number: H04W88/02 ,  H03F3/193 ,  H03F3/68 ,  H04B1/0053

Abstract: Omni-band amplifiers support multiple band groups. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes at least one gain transistor and a plurality of cascode transistors for a plurality of band groups. Each band group covers a plurality of bands. The gain transistor(s) receive an input radio frequency (RF) signal. The cascode transistors are coupled to the gain transistor(s) and provide an output RF signal for one of the plurality of band groups. In an exemplary design, the gain transistor(s) include a plurality of gain transistors for the plurality of band groups. One gain transistor and one cascode transistor are enabled to amplify the input RF signal and provide the output RF signal for the selected band group. The gain transistors may be coupled to different taps of a single source degeneration inductor or to different source degeneration inductors.