公开(公告)号：US20140138129A1

公开(公告)日：2014-05-22

申请号：US13715235

申请日：2012-12-14

Applicant: QUALCOMM INCORPORATED

Inventor： Layal L. Rouhana ,  Jomaa Houssam W. ,  Omar J. Bchir

IPC: H05K3/10 ,  H05K1/09

CPC classification number: H05K1/092 ,  B82Y30/00 ,  H05K1/09 ,  H05K3/108 ,  H05K3/1258 ,  H05K3/4069 ,  H05K3/4602 ,  H05K3/4664 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2201/0329 ,  H05K2201/068 ,  H05K2201/09563 ,  H05K2203/0723

Abstract: Some implementations provide a substrate that includes a first dielectric layer, a second dielectric layer, a core layer, and a composite conductive trace. The first and second dielectric layers have a first coefficient of thermal expansion (CTE). The core layer is between the first dielectric layer and the second dielectric layer. The composite conductive trace is between the first dielectric layer and the second dielectric layer. The composite conductive trace includes copper and another material. The composite conductive trace has a second CTE that is less than a third CTE for copper to more closely match the first CTE for the first and second dielectric layers.

Abstract translation: 一些实施方案提供了包括第一介电层，第二介电层，芯层和复合导电迹线的基板。 第一和第二介电层具有第一热膨胀系数（CTE）。 芯层在第一介电层和第二介电层之间。 复合导电迹线在第一介电层和第二介电层之间。 复合导电迹线包括铜和另一种材料。 复合导电迹线具有小于第三CTE的第二CTE，铜对于第一和第二电介质层更紧密地匹配第一CTE。