公开(公告)号：US20140367760A1

公开(公告)日：2014-12-18

申请号：US13974135

申请日：2013-08-23

Applicant: Qualcomm Incorporated

Inventor： Benjamin John BOWERS ,  James W. HAYWARD ,  Charanya GOPAL ,  Gregory Christopher BURDA ,  Robert J. BUCKI ,  Chock H. GAN ,  Giridhar NALLAPATI ,  Matthew D. YOUNGBLOOD ,  William R. FLEDERBACH

IPC: H01L27/02 ,  H01L21/22 ,  G06F17/50 ,  H01L27/092

CPC classification number: H01L27/0207 ,  G06F17/5068 ,  G06F17/5072 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/22 ,  H01L27/092 ,  H01L27/11521 ,  H01L27/11803 ,  H01L27/11807 ,  H01L29/66825 ,  Y02P90/265

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract translation: 用于设计集成电路的单元库，该库包括连续扩散兼容（CDC）单元。 CDC单元包括电连接到电源轨的p掺杂扩散区，并且连接于CDC单元的左边缘到右边缘; 第一多晶硅栅极，设置在p掺杂扩散区上方并电连接到p掺杂扩散区; 电连接到接地导轨并从左边缘到右边缘连续的n掺杂扩散区域; 第二多晶硅栅极，其设置在所述n掺杂扩散区域上方并电连接到所述n掺杂扩散区域; 设置在p掺杂和n掺杂扩散区上并靠近左边缘的左浮动多晶硅栅极; 以及设置在p掺杂和n掺杂扩散区域上并且靠近右边缘的右浮动多晶硅栅极。

公开(公告)号：US20150064864A1

公开(公告)日：2015-03-05

申请号：US14538617

申请日：2014-11-11

Applicant: QUALCOMM Incorporated

Inventor： Benjamin John BOWERS ,  James W. HAYWARD ,  Charanya GOPAL ,  Gregory Christopher BURDA ,  Robert J. BUCKI ,  Chock H. GAN ,  Giridhar NALLAPATI ,  Matthew D. YOUNGBLOOD ,  William R. FLEDERBACH

IPC: G06F17/50 ,  H01L27/115 ,  H01L29/66 ,  H01L21/22

CPC classification number: H01L27/0207 ,  G06F17/5068 ,  G06F17/5072 ,  G06F17/5081 ,  G06F2217/12 ,  H01L21/22 ,  H01L27/092 ,  H01L27/11521 ,  H01L27/11803 ,  H01L27/11807 ,  H01L29/66825 ,  Y02P90/265

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract translation: 用于设计集成电路的单元库，该库包括连续扩散兼容（CDC）单元。 CDC单元包括电连接到电源轨的p掺杂扩散区，并且连接于CDC单元的左边缘到右边缘; 第一多晶硅栅极，设置在p掺杂扩散区上方并电连接到p掺杂扩散区; 电连接到接地导轨并从左边缘到右边缘连续的n掺杂扩散区域; 第二多晶硅栅极，其设置在所述n掺杂扩散区域上方并电连接到所述n掺杂扩散区域; 设置在p掺杂和n掺杂扩散区上并靠近左边缘的左浮动多晶硅栅极; 以及设置在p掺杂和n掺杂扩散区域上并且靠近右边缘的右浮动多晶硅栅极。