公开(公告)号：US20160020383A1

公开(公告)日：2016-01-21

申请号：US14870769

申请日：2015-09-30

Applicant: QUALCOMM Incorporated

Inventor： Seung H. KANG ,  David BANG ,  Kangho LEE

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A method for integrating a magnetic tunnel junction (MTJ) device into an integrated circuit includes providing in a semiconductor back-end-of-line (BEOL) process flow a substrate having a first interlevel dielectric layer and at least a first conductive interconnect. Over the first interlevel dielectric layer and the first conductive interconnect, magnetic tunnel junction material layers are deposited. From the material layers a magnetic tunnel junction stack, coupled to the first conductive interconnect, is defined using a single mask process. The magnetic tunnel junction stack is integrated into the integrated circuit.

Abstract translation: 将磁性隧道结（MTJ）器件集成到集成电路中的方法包括在半导体后端（BEOL）工艺流程中提供具有第一层间介质层和至少第一导电互连的衬底。 在第一层间介质层和第一导电互连层之后，沉积磁隧道结材料层。 从材料层，使用单个掩模工艺限定耦合到第一导电互连的磁性隧道结堆叠。 磁性隧道结堆叠集成在集成电路中。