公开(公告)号：US09722335B2

公开(公告)日：2017-08-01

申请号：US14270156

申请日：2014-05-05

申请人： QUALCOMM Incorporated

发明人： Robert Walter Berry, Jr. ,  Ryan Joseph Pennington ,  Joab Daniel Henderson ,  Divya Kumar

IPC分类号： G06F11/07 ,  H01R12/70 ,  G06F11/20 ,  G06F13/16 ,  G06F13/40

CPC分类号： H01R12/7076 ,  G06F11/008 ,  G06F11/07 ,  G06F11/2094 ,  G06F13/1668 ,  G06F13/409 ,  G11C5/04 ,  G11C29/781 ,  G11C29/832

摘要： An enhanced dual in line memory module (DIMM) connector includes internal conductive paths that provide access to signaling on standard conductive paths to an industry standard DIMM. The internal conductive paths are coupled in series or in parallel with the standard conductive paths through the connector. Interposer circuitry, such as control circuitry and or supplemental memory circuitry, may be incorporated on or within the connector. The interposer circuitry may include field effect transistor (FET) switching circuitry configured to selectively decouple a defective dynamic random memory (DRAM) on a DIMM from a conductive path to a memory controller and couple a substitute DRAM to the conductive paths in its place.