公开(公告)号：US20180074117A1

公开(公告)日：2018-03-15

申请号：US15265744

申请日：2016-09-14

Applicant: QUALCOMM Incorporated

Inventor： Rami SALEM ,  Lesly Zaren V. ENDRINAL ,  Hyeokjin LIM ,  Hadi BUNNALIM ,  Robert KIM ,  Lavakumar RANGANATHAN ,  Mickael MALABRY

IPC: G01R31/28 ,  H01L23/50 ,  H01L27/02 ,  H01L27/088 ,  G01R31/311

CPC classification number: G01R31/2891 ,  G01R31/2834 ,  G01R31/311 ,  H01L23/50 ,  H01L23/5286 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/11807 ,  H01L2223/54426

Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.