公开(公告)号：US20140210835A1

公开(公告)日：2014-07-31

申请号：US13750959

申请日：2013-01-25

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： John Hyunchul Hong ,  Hong-Son Ryang ,  Cheonhong Kim ,  Tze-Ching Fung

IPC: H01L29/786 ,  G09G3/20 ,  H01L29/66

CPC classification number: H01L29/78693 ,  G09G3/20 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6675 ,  H01L29/78696

Abstract: This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).

Abstract translation: 本公开提供了用于衬底上的薄膜晶体管（TFT）器件的系统，方法和装置。 在一个方面，TFT器件包括栅电极，氧化物半导体层和栅电极和氧化物半导体层之间的栅极绝缘体。 氧化物半导体层包括至少两种金属氧化物，其中两种金属氧化物在氧化物半导体层的下表面和上表面之间具有相对于彼此变化的浓度。 TFT器件还包括与氧化物半导体层的一部分相邻的源极金属和与氧化物半导体层的另一部分相邻的漏极金属。 可以通过使用原子层沉积（ALD）的顺序沉积技术精确地控制氧化物半导体层的组成。

公开(公告)号：US20160123817A1

公开(公告)日：2016-05-05

申请号：US14528179

申请日：2014-10-30

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： Nathaniel Robert Bennett ,  John Hyunchul Hong ,  Tze-Ching Fung

IPC: G01K7/16 ,  G06T1/20 ,  H01L27/02 ,  G06F3/041 ,  H01L29/786 ,  H01L29/24

CPC classification number: G01K7/16 ,  G01K7/01 ,  H01L27/0266 ,  H01L27/1225

Abstract: This disclosure provides systems, methods and apparatus for measuring a temperature of a display. In one aspect, a circuit may use one or more stages of diodes or diode-connected transistors providing the functionality of diodes. Each stage may include the functionality of diodes in opposite directions. A direct current (DC) current source or an alternating current (AC) voltage source may be applied to the diodes or diode-connected transistors to measure the temperature of the display.

Abstract translation: 本公开提供了用于测量显示器的温度的系统，方法和装置。 在一个方面，电路可以使用提供二极管的功能的一个或多个二极管或二极管连接的晶体管级。 每个阶段可以包括相反方向的二极管的功能。 可以将直流（DC）电流源或交流（AC）电压源施加到二极管或二极管连接的晶体管以测量显示器的温度。

公开(公告)号：US20150349000A1

公开(公告)日：2015-12-03

申请号：US14512948

申请日：2014-10-13

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： Cheonhong Kim ,  Tze-Ching Fung ,  Jae Hyeong Seo ,  Tallis Young Chang

IPC: H01L27/13 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L27/13 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/6675

Abstract: This disclosure provides apparatuses and methods for fabricating TFTs and storage capacitors on a substrate. In one aspect, an apparatus includes a TFT and a storage capacitor, where the TFT includes a first metal layer, a second metal layer, and a semiconductor layer, where the semiconductor layer is protected by a first etch stop layer and a second etch stop layer. The storage capacitor includes the second etch stop layer as a dielectric between the first metal layer and the second metal layer. In another aspect, an apparatus includes a TFT and a storage capacitor, where the TFT includes a first metal layer, a dielectric layer, and a semiconductor layer, where the semiconductor layer is protected by an etch stop layer. The storage capacitor includes the dielectric layer as a dielectric between the first metal layer and the semiconductor layer.

Abstract translation: 本公开提供了用于在基板上制造TFT和存储电容器的装置和方法。 在一个方面，一种装置包括TFT和存储电容器，其中TFT包括第一金属层，第二金属层和半导体层，其中半导体层被第一蚀刻停止层和第二蚀刻停止 层。 存储电容器包括作为第一金属层和第二金属层之间的电介质的第二蚀刻停止层。 在另一方面，一种装置包括TFT和存储电容器，其中TFT包括第一金属层，电介质层和半导体层，其中半导体层被蚀刻停止层保护。 存储电容器包括作为第一金属层和半导体层之间的电介质的电介质层。

公开(公告)号：US09431244B2

公开(公告)日：2016-08-30

申请号：US14495586

申请日：2014-09-24

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： John Hyunchul Hong ,  Tze-Ching Fung ,  Cheonhong Kim ,  Kenji Nomura

IPC: H01L21/8242 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78693

Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

Abstract translation: 本公开提供了在薄膜晶体管（TFT）中退火氧化物半导体的方法和装置。 在一个方面，该方法包括提供在基板上形成的部分制造的TFT结构的基板。 部分制造的TFT结构可以包括在氧化物半导体层上的氧化物半导体层和电介质氧化物层。 氧化物半导体层通过在环境条件下用红外激光器将电介质氧化物层加热到低于氧化物半导体层的熔融温度的温度来退火。 红外激光辐射可以被电介质氧化物层基本上吸收，并且可以在与电介质氧化物层接触的界面处从氧化物半导体层去除不想要的缺陷。

公开(公告)号：US20160086802A1

公开(公告)日：2016-03-24

申请号：US14495586

申请日：2014-09-24

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： John Hyunchul Hong ,  Tze-Ching Fung ,  Cheonhong Kim ,  Kenji Nomura

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/78693

Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

Abstract translation: 本公开提供了用于在薄膜晶体管（TFT）中退火氧化物半导体的方法和装置。 在一个方面，该方法包括提供在基板上形成的部分制造的TFT结构的基板。 部分制造的TFT结构可以包括在氧化物半导体层上的氧化物半导体层和电介质氧化物层。 氧化物半导体层通过在环境条件下用红外激光器将电介质氧化物层加热到低于氧化物半导体层的熔融温度的温度来退火。 红外激光辐射可以被电介质氧化物层基本上吸收，并且可以在与电介质氧化物层接触的界面处从氧化物半导体层去除不想要的缺陷。

公开(公告)号：US09171960B2

公开(公告)日：2015-10-27

申请号：US13750959

申请日：2013-01-25

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： John Hyunchul Hong ,  Hong-Son Ryang ,  Cheonhong Kim ,  Tze-Ching Fung

IPC: H01L29/786 ,  G09G3/20 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/10

CPC classification number: H01L29/78693 ,  G09G3/20 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6675 ,  H01L29/78696

Abstract: This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).

Abstract translation: 本公开提供了用于衬底上的薄膜晶体管（TFT）器件的系统，方法和装置。 在一个方面，TFT器件包括栅电极，氧化物半导体层和栅电极和氧化物半导体层之间的栅极绝缘体。 氧化物半导体层包括至少两种金属氧化物，其中两种金属氧化物在氧化物半导体层的下表面和上表面之间具有相对于彼此变化的浓度。 TFT器件还包括与氧化物半导体层的一部分相邻的源极金属和与氧化物半导体层的另一部分相邻的漏极金属。 可以通过使用原子层沉积（ALD）的顺序沉积技术精确地控制氧化物半导体层的组成。