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公开(公告)号:US20250056164A1
公开(公告)日:2025-02-13
申请号:US18718427
申请日:2023-03-02
Applicant: QUALCOMM Technologies, Inc.
Inventor: Robert John LITTRELL
IPC: H04R17/00
Abstract: Systems, devices, methods, and implementations related to contact detection are described herein. In one aspect, a system is provided. The system includes a first piezoelectric microelectromechanical systems (MEMS) transducer coupled to configured to generate a first analog signal when the first analog signal is transduced from vibrations propagating through the object. The system includes a second piezoelectric MEMS transducer having configured to generate a second analog signal transduced from acoustic vibrations at a location of the object, and classification circuitry coupled to the output of first piezoelectric MEMS transducer and the output of the second piezoelectric MEMS transducer, where the classification circuitry is configured to process data from the first analog signal and data from the second analog signal, and to categorize combinations of the first analog signal and the second analog signal received during one or more time frames.
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公开(公告)号:US20230422624A1
公开(公告)日:2023-12-28
申请号:US18247869
申请日:2021-12-03
Applicant: QUALCOMM Technologies, Inc.
Inventor: Robert John LITTRELL , Craig CORE
IPC: H10N30/853 , H04R17/02 , H10N30/05 , H10N30/074 , H10N30/30
CPC classification number: H10N30/853 , H04R17/02 , H10N30/306 , H10N30/074 , H10N30/05
Abstract: A low noise piezoelectric sensor, such as a piezoelectric acoustic transducer, includes a first conductive layer, a second conductive layer, and a piezoelectric layer between the first conductive layer and the second conductive layer. The piezoelectric layer comprises aluminum scandium nitride (AlScN) having a scandium content of greater than 15%, in which the scandium content and an aluminum content comprises 100% of the aluminum scandium nitride. In this way, the piezoelectric layer (or the sensor including the piezoelectric layer) achieves a dissipation factor of less than about 0.1%.
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公开(公告)号:US20230270012A1
公开(公告)日:2023-08-24
申请号:US18174548
申请日:2023-02-24
Applicant: QUALCOMM Technologies, Inc.
Inventor: Robert John LITTRELL
CPC classification number: H10N30/2044 , H10N30/875
Abstract: Aspects include piezoelectric acoustic transducers and systems for acoustic transduction. In some aspects, an acoustic transducer is structured with a silicon substrate having a top surface and a bottom surface, where the top surface has a first portion and an edge along the first portion associated with an acoustic aperture. The transducer has a first silicon oxide layer disposed over the first portion of the top surface of the silicon substrate, a polysilicon layer disposed over the first silicon oxide layer, and a second silicon oxide layer disposed over the polysilicon layer. A cantilevered beam comprising a fixed end, a deflection end, a top surface, and a bottom surface, has a first portion of the bottom surface at the fixed end disposed over the second silicon oxide layer, where a second portion of the bottom surface at the deflection end is formed over the acoustic aperture. In some aspects. transducer elements are reconfigurable between parallel and serial configurations depending on a system operating mode.
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公开(公告)号:US20230270011A1
公开(公告)日:2023-08-24
申请号:US18174536
申请日:2023-02-24
Applicant: QUALCOMM Technologies, Inc.
Inventor: Robert John LITTRELL
IPC: H10N30/20 , B81B3/00 , H10N30/50 , H10N30/853
CPC classification number: H10N30/2042 , B81B3/0021 , H10N30/503 , H10N30/853 , B81B2201/032 , B81B2203/0118 , B81B2203/04
Abstract: Aspects include piezoelectric acoustic transducers and systems for acoustic transduction. In some aspects, an acoustic transducer is structured with a silicon substrate having a top surface and a bottom surface, where the top surface has a first portion and an edge along the first portion associated with an acoustic aperture. The transducer has a first silicon oxide layer disposed over the first portion of the top surface of the silicon substrate, a polysilicon layer disposed over the first silicon oxide layer, and a second silicon oxide layer disposed over the polysilicon layer. A cantilevered beam comprising a fixed end, a deflection end, a top surface, and a bottom surface, has a first portion of the bottom surface at the fixed end disposed over the second silicon oxide layer, where a second portion of the bottom surface at the deflection end is formed over the acoustic aperture. In some aspects. transducer elements are reconfigurable between parallel and serial configurations depending on a system operating mode.
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公开(公告)号:US20230422623A1
公开(公告)日:2023-12-28
申请号:US18335277
申请日:2023-06-15
Applicant: QUALCOMM Technologies Inc.
Inventor: Robert John LITTRELL
IPC: H10N30/50 , H10N30/05 , H10N30/076 , H10N30/80 , H10N30/30 , B81B3/00 , B81C1/00 , C23C14/06 , C23C14/14 , C23C14/34 , C23C14/54 , H04R7/06 , H04R17/02 , H04R31/00
CPC classification number: H10N30/508 , H10N30/05 , H10N30/50 , H10N30/076 , H10N30/80 , H10N30/306 , B81B3/0072 , B81C1/00666 , C23C14/0641 , C23C14/14 , C23C14/34 , C23C14/542 , H04R7/06 , H04R17/02 , H04R31/003 , B81B2201/0257 , B81B2203/0118 , B81C2201/017
Abstract: A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.
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公开(公告)号:US20230143656A1
公开(公告)日:2023-05-11
申请号:US18053669
申请日:2022-11-08
Applicant: QUALCOMM Technologies, Inc.
Inventor: Robert John LITTRELL
IPC: B81B3/00
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0118 , B81B2203/04
Abstract: Aspects of acoustic transducers are described. One aspect is a microelectromechanical (MEMS) transducer comprising a substrate and multiple cantilevered beams. A first cantilevered beam comprises a first protrusion and a first piezoelectric structure, where the first piezoelectric structure comprises a first deflection end and a first fixed end, where the first fixed end is coupled to the substrate, and where the first deflection end is cantilevered away from the substrate. The first cantilevered beam is separated from a second cantilevered beam by a gap. The first protrusion is disposed at the first deflection end and increases a thickness of the first cantilevered beam along the gap at the first deflection end. A second protrusion of the second beam is disposed at a second deflection end and increases a thickness of the second cantilevered beam along the gap at the second deflection end.
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