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    Light emitting diode light source modules
    5.
    发明授权
    Light emitting diode light source modules 有权
    发光二极管光源模块

    公开(公告)号：US09303861B2

    公开(公告)日：2016-04-05

    申请号：US12975445

    申请日：2010-12-22

    申请人： Qing (Charles) Li ,  Yangcheng Huang ,  Haijun Wang ,  Guowen Lei ,  Cuie Wei ,  Menghua Long ,  GuiLin Wang

    发明人： Qing (Charles) Li ,  Yangcheng Huang ,  Haijun Wang ,  Guowen Lei ,  Cuie Wei ,  Menghua Long ,  GuiLin Wang

    IPC分类号： F21V7/20 ,  F21V31/04 ,  F21S4/00 ,  F21Y101/02

    CPC分类号： F21V31/04 ,  F21S4/10 ,  F21Y2115/10

    摘要： The present invention provides a highly-protective, heat dissipating LED light source module that may be waterproof or non-waterproof. In an embodiment, the present invention provides an LED light source module comprising: a waterproof housing comprising a metal substrate and a plastic cover integrally disposed on one or more surfaces of the metal substrate; and at least one light emitting diode, electronic component, and power line disposed on and operably connected with the metal substrate and encapsulated thereon by the plastic cover. In other embodiments are provided LED light source modules comprising: a circuit board with at least two through holes disposed at selected positions; at least one light emitting diode, electronic component, and power line disposed on the circuit board and operably connected therewith; and a plastic cover comprising at least two pins disposed and shaped for interconnection with corresponding through holes of the circuit board. The simple LED light source models disclosed may be efficiently and inexpensively produced and are capable of withstanding the harsh environments in which they are sometimes used.

    摘要翻译： 本发明提供一种可防水或不防水的高保护性散热LED光源模块。 在一个实施例中，本发明提供了一种LED光源模块，包括：防水壳体，包括金属基板和整体设置在所述金属基板的一个或多个表面上的塑料盖; 以及至少一个发光二极管，电子元件和电力线，其设置在金属基板上并与金属基板可操作地连接，并由塑料盖封装在其上。 在其它实施例中，提供了LED光源模块，包括：具有设置在选定位置处的至少两个通孔的电路板; 至少一个发光二极管，电子部件和设置在电路板上并与其可操作地连接的电力线; 以及塑料盖，其包括设置和成形为用于与电路板的相应通孔相互连接的至少两个销。 所公开的简单的LED光源模型可以有效且廉价地产生，并且能够承受有时使用它们的恶劣环境。

    LIGHT EMITTING DIODE LIGHT SOURCE MODULES
    6.
    发明申请
    LIGHT EMITTING DIODE LIGHT SOURCE MODULES 有权
    发光二极管光源模块

    公开(公告)号：US20120002407A1

    公开(公告)日：2012-01-05

    申请号：US12975445

    申请日：2010-12-22

    申请人： Qing (Charles) Li ,  Yangcheng Huang ,  Haijun Wang ,  Guowen Lei ,  Cuie Wei ,  Menghua Long ,  GuiLin Wang

    发明人： Qing (Charles) Li ,  Yangcheng Huang ,  Haijun Wang ,  Guowen Lei ,  Cuie Wei ,  Menghua Long ,  GuiLin Wang

    IPC分类号： F21V7/00 ,  F21V29/00 ,  F21V15/01

    CPC分类号： F21V31/04 ,  F21S4/10 ,  F21Y2115/10

    摘要： The present invention provides a highly-protective, heat dissipating LED light source module that may be waterproof or non-waterproof. In an embodiment, the present invention provides an LED light source module comprising: a waterproof housing comprising a metal substrate and a plastic cover integrally disposed on one or more surfaces of the metal substrate; and at least one light emitting diode, electronic component, and power line disposed on and operably connected with the metal substrate and encapsulated thereon by the plastic cover. In other embodiments are provided LED light source modules comprising: a circuit board with at least two through holes disposed at selected positions; at least one light emitting diode, electronic component, and power line disposed on the circuit board and operably connected therewith; and a plastic cover comprising at least two pins disposed and shaped for interconnection with corresponding through holes of the circuit board. The simple LED light source models disclosed may be efficiently and inexpensively produced and are capable of withstanding the harsh environments in which they are sometimes used.

    摘要翻译： 本发明提供一种可防水或不防水的高保护性散热LED光源模块。 在一个实施例中，本发明提供了一种LED光源模块，包括：防水壳体，包括金属基板和整体设置在所述金属基板的一个或多个表面上的塑料盖; 以及至少一个发光二极管，电子元件和电力线，其设置在金属基板上并与金属基板可操作地连接，并由塑料盖封装在其上。 在其它实施例中，提供了LED光源模块，包括：具有设置在选定位置处的至少两个通孔的电路板; 至少一个发光二极管，电子部件和设置在电路板上并与其可操作地连接的电力线; 以及塑料盖，其包括设置和成形为用于与电路板的相应通孔相互连接的至少两个销。 所公开的简单的LED光源模型可以有效且廉价地产生，并且能够承受有时使用它们的恶劣环境。

    Method of converting RB to RD by using cutinase under stepwise changing temperatures
    7.
    发明申请
    Method of converting RB to RD by using cutinase under stepwise changing temperatures 审中-公开

    公开(公告)号：US20180073049A1

    公开(公告)日：2018-03-15

    申请号：US15618068

    申请日：2017-06-08

    申请人： Yongmei Xia ,  Yun Fang ,  Haijun Wang

    发明人： Yongmei Xia ,  Yun Fang ,  Haijun Wang

    IPC分类号： C12P19/56 ,  C07H15/24

    摘要： The present invention provides a method to produce RD by using a cutinase to catalyze the esterification of RB under stepwise cooling temperatures, which is related to the field of biosynthesis of organic compounds. The method uses a cutinase from Thermobifida fusca to catalyze the esterification of RB and sophorose to produce RD. The stepwise cooling temperatures are used to reduce the heat inactivation of the enzyme as well as to improve the mass transfer. The method catalyzes the esterification of RB to produce RD in a solvent such as methanol, DMSO and DMF. The reaction is safe, efficient and highly selective. In addition, the method uses stepwise additions of substrate RB and cooling temperatures for the esterification reaction. In this way, it speeds up the initial reaction rate, increases the amount of solved RB as it is converted to RD, and improves the mass transfer to further increase the reaction speed. In summary, the method uses moderate reaction conditions, and has a high yield and a simple purification procedure.

    LDMOS DEVICE STRUCTURE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    LDMOS DEVICE STRUCTURE AND MANUFACTURING METHOD OF THE SAME 有权
    LDMOS器件结构及其制造方法

    公开(公告)号：US20120091524A1

    公开(公告)日：2012-04-19

    申请号：US13271120

    申请日：2011-10-11

    申请人： Shuai Zhang ,  Haijun Wang

    发明人： Shuai Zhang ,  Haijun Wang

    IPC分类号： H01L29/78 ,  H01L21/762

    CPC分类号： H01L29/7835 ,  H01L21/76232 ,  H01L29/66659

    摘要： The present invention discloses an LDMOS device structure, including a MOS transistor cell, wherein an isolation region is formed on each outer side of both a source region and a drain region of the MOS transistor cell; each isolation region includes a plurality of isolation trenches and isolates the MOS transistor cell from its surroundings; the height of the isolation region is smaller than that of a gate of the MOS transistor cell. The present invention also discloses a manufacturing method of the LDMOS device structure, including forming isolation trenches by lithography and etching processes, then forming isolation regions of SiO2 by depleting silicon between isolation trenches through high-temperature drive-in. The present invention can reduce parasitic capacitance, surface unevenness and difficulty of subsequent process and realize the production of small-size gate devices by forming a thicker field oxide layer and a gap structure of isolation trenches.

    摘要翻译： 本发明公开了一种包括MOS晶体管单元的LDMOS器件结构，其中在MOS晶体管单元的源极区域和漏极区域的每个外侧形成有隔离区域; 每个隔离区域包括多个隔离沟槽，并将MOS晶体管单元与其周围隔离; 隔离区域的高度小于MOS晶体管单元的栅极的高度。 本发明还公开了一种LDMOS器件结构的制造方法，包括通过光刻和蚀刻工艺形成隔离沟槽，然后通过高温驱入在隔离沟槽之间消耗硅而形成SiO 2隔离区。 本发明可以通过形成较厚的场氧化物层和隔离沟槽的间隙结构来减少寄生电容，表面不均匀性和随后工艺的困难，并实现小尺寸栅极器件的生产。

    LDMOS device structure and manufacturing method of the same
    9.
    发明授权
    LDMOS device structure and manufacturing method of the same 有权
    LDMOS器件的结构和制造方法相同

    公开(公告)号：US08569833B2

    公开(公告)日：2013-10-29

    申请号：US13271120

    申请日：2011-10-11

    申请人： Shuai Zhang ,  Haijun Wang

    发明人： Shuai Zhang ,  Haijun Wang

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/7835 ,  H01L21/76232 ,  H01L29/66659

    摘要： The present invention discloses an LDMOS device structure, including a MOS transistor cell, wherein an isolation region is formed on each outer side of both a source region and a drain region of the MOS transistor cell; each isolation region includes a plurality of isolation trenches and isolates the MOS transistor cell from its surroundings; the height of the isolation region is smaller than that of a gate of the MOS transistor cell. The present invention also discloses a manufacturing method of the LDMOS device structure, including forming isolation trenches by lithography and etching processes, then forming isolation regions of SiO2 by depleting silicon between isolation trenches through high-temperature drive-in. The present invention can reduce parasitic capacitance, surface unevenness and difficulty of subsequent process and realize the production of small-size gate devices by forming a thicker field oxide layer and a gap structure of isolation trenches.

    摘要翻译： 本发明公开了一种包括MOS晶体管单元的LDMOS器件结构，其中在MOS晶体管单元的源极区域和漏极区域的每个外侧形成有隔离区域; 每个隔离区域包括多个隔离沟槽，并将MOS晶体管单元与其周围隔离; 隔离区域的高度小于MOS晶体管单元的栅极的高度。 本发明还公开了一种LDMOS器件结构的制造方法，包括通过光刻和蚀刻工艺形成隔离沟槽，然后通过高温驱入在隔离沟槽之间消耗硅而形成SiO 2隔离区。 本发明可以通过形成较厚的场氧化物层和隔离沟槽的间隙结构来减少寄生电容，表面不均匀性和随后工艺的困难，并实现小尺寸栅极器件的生产。

    Method of converting RB to RD by using cutinase under stepwise changing temperatures
    10.
    发明授权
    Method of converting RB to RD by using cutinase under stepwise changing temperatures 有权

    公开(公告)号：US10557159B2

    公开(公告)日：2020-02-11

    申请号：US15618068

    申请日：2017-06-08

    申请人： Yongmei Xia ,  Yun Fang ,  Haijun Wang

    发明人： Yongmei Xia ,  Yun Fang ,  Haijun Wang

    IPC分类号： C12P19/56 ,  C07H15/24

    摘要： The present invention provides a method to produce RD by using a cutinase to catalyze the esterification of RB under stepwise cooling temperatures, which is related to the field of biosynthesis of organic compounds. The method uses a cutinase from Thermobifida fusca to catalyze the esterification of RB and sophorose to produce RD. The stepwise cooling temperatures are used to reduce the heat inactivation of the enzyme as well as to improve the mass transfer. The method catalyzes the esterification of RB to produce RD in a solvent such as methanol, DMSO and DMF. The reaction is safe, efficient and highly selective. In addition, the method uses stepwise additions of substrate RB and cooling temperatures for the esterification reaction. In this way, it speeds up the initial reaction rate, increases the amount of solved RB as it is converted to RD, and improves the mass transfer to further increase the reaction speed. In summary, the method uses moderate reaction conditions, and has a high yield and a simple purification procedure.