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公开(公告)号：US11881833B2
公开(公告)日：2024-01-23
申请号：US17968292
申请日：2022-10-18
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright
CPC classification number: H03H7/0115 , H03H7/175 , H03H7/1766 , H03H7/1775 , H03H2001/0078 , H03H2001/0085
Abstract: An integrated passive die includes a substrate, an input node, an output node, and RF filtering circuitry. The RF filtering circuitry includes a number of LC tank circuits coupled between the input node and the output node. Each one of the LC tank circuits include an inductor and a capacitor. The inductor is formed by a metal trace over the substrate. The capacitor is coupled in parallel with the inductor over the substrate. The inductor and the capacitor are provided such that a resonance frequency of the combination of the inductor and the capacitor is less than a self-resonance frequency of the inductor.
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公开(公告)号：US10833071B2
公开(公告)日：2020-11-10
申请号：US16053211
申请日：2018-08-02
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright , Timothy S. Henderson
Abstract: A semiconductor device includes a first varactor diode and a second varactor diode. The second varactor diode is coupled in series with the first varactor diode and vertically disposed over the first varactor diode. By vertically disposing the second varactor diode over the first varactor diode, the space occupied by the pair of varactor diodes can be significantly reduced.
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公开(公告)号：US20230058725A1
公开(公告)日：2023-02-23
申请号：US17968292
申请日：2022-10-18
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright
Abstract: An integrated passive die includes a substrate, an input node, an output node, and RF filtering circuitry. The RF filtering circuitry includes a number of LC tank circuits coupled between the input node and the output node. Each one of the LC tank circuits include an inductor and a capacitor. The inductor is formed by a metal trace over the substrate. The capacitor is coupled in parallel with the inductor over the substrate. The inductor and the capacitor are provided such that a resonance frequency of the combination of the inductor and the capacitor is less than a self-resonance frequency of the inductor.
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公开(公告)号：US11489506B2
公开(公告)日：2022-11-01
申请号：US17079240
申请日：2020-10-23
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright
Abstract: An integrated passive die includes a substrate, an input node, an output node, and RF filtering circuitry. The RF filtering circuitry includes a number of LC tank circuits coupled between the input node and the output node. Each one of the LC tank circuits include an inductor and a capacitor. The inductor is formed by a metal trace over the substrate. The capacitor is coupled in parallel with the inductor over the substrate. The inductor and the capacitor are provided such that a resonance frequency of the combination of the inductor and the capacitor is less than a self-resonance frequency of the inductor.
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公开(公告)号：US10755992B2
公开(公告)日：2020-08-25
申请号：US15992613
申请日：2018-05-30
Applicant: Qorvo US, Inc.
Inventor： Julio C. Costa , Merrill Albert Hatcher, Jr. , Peter V. Wright , Jon Chadwick
IPC: H01L23/52 , H01L23/31 , H01L21/56 , H01L21/3105 , H01L23/00 , H01L23/50 , H01L23/29 , H01L21/78 , H01L21/762 , H01L23/367 , H01L21/311 , H01L23/544
Abstract: The present disclosure relates to a mold module that includes a device layer, a number of first bump structures, a first mold compound, a stop layer, and a second mold compound. The device layer includes a number of input/output (I/O) contacts at a top surface of the device layer. Each first bump structure is formed over the device layer and electronically coupled to a corresponding I/O contact. The first mold compound resides over the device layer, and a portion of each first bump structure is exposed through the first mold compound. The stop layer is formed underneath the device layer. The second mold compound resides underneath the stop layer, such that the stop layer separates the device layer from the second mold compound.
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Patent Agency Ranking
公开(公告)号：US10535784B2
公开(公告)日：2020-01-14
申请号：US15901061
申请日：2018-02-21
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright , Timothy S. Henderson
Abstract: Embodiments include apparatuses and methods related to vertically stacked varactors. Specifically two varactors may be constructed of vertically stacked layers including an anode layer, a contact layer, and a varactor layer. The two varactors may share one or more layers in common. In some embodiments the two varactors may share the anode layer in common, while in other embodiments the two varactors may share the contact layer in common.
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公开(公告)号：US10453765B2
公开(公告)日：2019-10-22
申请号：US15992639
申请日：2018-05-30
Applicant: Qorvo US, Inc.
Inventor： Julio C. Costa , Merrill Albert Hatcher, Jr. , Peter V. Wright , Jon Chadwick
IPC: H01L23/31 , H01L21/56 , H01L21/78 , H01L23/367 , H01L23/498 , H01L21/3105 , H01L23/00 , H01L23/50 , H01L23/29 , H01L21/762 , H01L21/311 , H01L23/544
Abstract: The present disclosure relates to a wafer-level packaging process. According to an exemplary process, a precursor wafer that includes a device layer with a number of input/output (I/O) contacts, a number of bump structures over the device layer, the stop layer underneath the device layer, and a silicon handle layer underneath the stop layer is provided. Herein, each bump structure is electronically coupled to a corresponding I/O contact. A first mold compound is then applied over the device layer to encapsulate each bump structure. Next, the silicon handle layer is removed substantially. A second mold compound is applied to an exposed surface from which the silicon handle layer was removed. Finally, the first mold compound is thinned down to expose a portion of each bump structure.
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公开(公告)号：US20210126620A1
公开(公告)日：2021-04-29
申请号：US17079286
申请日：2020-10-23
Applicant: Qorvo US, Inc.
Inventor： Peter V. Wright
Abstract: Radio frequency (RF) filtering circuitry includes an input node, an output node, a shunt node, a first bulk acoustic wave (BAW) resonator, a second BAW resonator, a first inductor, and a second inductor. The first BAW resonator is coupled between the input node and the output node. The second BAW resonator is coupled between an intermediate node and the shunt node. The first inductor is coupled between the input node and the intermediate node. The second inductor is coupled between the output node and the intermediate node.
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公开(公告)号：US10658259B2
公开(公告)日：2020-05-19
申请号：US15992613
申请日：2018-05-30
Applicant: Qorvo US, Inc.
Inventor： Julio C. Costa , Merrill Albert Hatcher, Jr. , Peter V. Wright , Jon Chadwick
IPC: H01L23/52 , H01L23/31 , H01L21/56 , H01L21/3105 , H01L23/00 , H01L23/50 , H01L23/29 , H01L21/78 , H01L21/762 , H01L23/367 , H01L21/311 , H01L23/544
Abstract: The present disclosure relates to a mold module that includes a device layer, a number of first bump structures, a first mold compound, a stop layer, and a second mold compound. The device layer includes a number of input/output (I/O) contacts at a top surface of the device layer. Each first bump structure is formed over the device layer and electronically coupled to a corresponding I/O contact. The first mold compound resides over the device layer, and a portion of each first bump structure is exposed through the first mold compound. The stop layer is formed underneath the device layer. The second mold compound resides underneath the stop layer, such that the stop layer separates the device layer from the second mold compound.
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公开(公告)号：US10586747B2
公开(公告)日：2020-03-10
申请号：US15992613
申请日：2018-05-30
Applicant: Qorvo US, Inc.
Inventor： Julio C. Costa , Merrill Albert Hatcher, Jr. , Peter V. Wright , Jon Chadwick
IPC: H01L23/52 , H01L23/31 , H01L21/56 , H01L21/3105 , H01L23/00 , H01L23/50 , H01L23/29 , H01L21/78 , H01L21/762 , H01L23/367 , H01L21/311 , H01L23/544
Abstract: The present disclosure relates to a mold module that includes a device layer, a number of first bump structures, a first mold compound, a stop layer, and a second mold compound. The device layer includes a number of input/output (I/O) contacts at a top surface of the device layer. Each first bump structure is formed over the device layer and electronically coupled to a corresponding I/O contact. The first mold compound resides over the device layer, and a portion of each first bump structure is exposed through the first mold compound. The stop layer is formed underneath the device layer. The second mold compound resides underneath the stop layer, such that the stop layer separates the device layer from the second mold compound.
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