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公开(公告)号：US11955172B2
公开(公告)日：2024-04-09
申请号：US17994676
申请日：2022-11-28
申请人： National Research Council of Canada , Quantum Silicon Inc. , The Governors of the University of Alberta
发明人： Roshan Achal , Robert A. Wolkow , Jason Pitters , Martin Cloutier , Mohammad Rashidi , Marco Taucer , Taleana Huff
CPC分类号： G11C11/44 , H10N60/11 , H01L2224/0391
摘要： An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
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公开(公告)号：US11232976B2
公开(公告)日：2022-01-25
申请号：US16632460
申请日：2018-06-29
申请人： Quantum Silicon Inc. , The Governors of the University of Alberta , National Research Council of Canada
IPC分类号： H01L21/00 , H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321 , H01L27/12
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
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公开(公告)号：US20220102197A1
公开(公告)日：2022-03-31
申请号：US17548782
申请日：2021-12-13
申请人： Quantum Silicon Inc. , The Governors of the University of Alberta , National Research Council of Canada
IPC分类号： H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321 , H01L27/12
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
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公开(公告)号：US20210272625A1
公开(公告)日：2021-09-02
申请号：US17253768
申请日：2019-06-19
申请人： National Research Council of Canada , Quantum Silicon Inc. , The Governors of the University of Alberta
发明人： Roshan Achal , Robert A. Wolkow , Jason Pitters , Martin Cloutier , Mohammad Rashidi , Marco Taucer , Taleana Huff
摘要： An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
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公开(公告)号：US20230093537A1
公开(公告)日：2023-03-23
申请号：US17994676
申请日：2022-11-28
申请人： National Research Council of Canada , Quantum Silicon Inc. , The Governors of the University of Alberta
发明人： Roshan Achal , Robert A. Wolkow , Jason Pitters , Martin Cloutier , Mohammad Rashidi , Marco Taucer , Taleana Huff
摘要： An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
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公开(公告)号：US20210159116A1
公开(公告)日：2021-05-27
申请号：US16632460
申请日：2018-06-29
申请人： QUANTUM SILICON INC. , THE GOVERNORS OF THE UNIVERSITY OF ALBERTA , NATIONAL RESEARCH COUNCIL OF CANADA
IPC分类号： H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
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公开(公告)号：US11749558B2
公开(公告)日：2023-09-05
申请号：US17548782
申请日：2021-12-13
申请人： Quantum Silicon Inc. , The Governors of the University of Alberta , National Research Council of Canada
IPC分类号： H01L21/00 , H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321 , H01L27/12
CPC分类号： H01L21/76264 , H01L21/02096 , H01L21/28518 , H01L21/3212 , H01L27/1207
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
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公开(公告)号：US11557337B2
公开(公告)日：2023-01-17
申请号：US17253768
申请日：2019-06-19
申请人： National Research Council of Canada , Quantum Silicon Inc. , The Governors of the University of Alberta
发明人： Roshan Achal , Robert A. Wolkow , Jason Pitters , Martin Cloutier , Mohammad Rashidi , Marco Taucer , Taleana Huff
摘要： An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
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