公开(公告)号：US20200284957A1

公开(公告)日：2020-09-10

申请号：US16809785

申请日：2020-03-05

Applicant: Quantum-Si Incorporated

Inventor： Michael Bellos ,  Faisal R. Ahmad ,  James Beach ,  Michael Coumans ,  Sharath Hosali ,  Ali Kabiri ,  Kyle Preston ,  Gerard Schmid ,  Bing Shen ,  Jonathan M. Rothberg

IPC: G02B5/22 ,  G02B5/00 ,  G01N21/64

Abstract: Apparatus and methods relating to attenuating excitation radiation incident on a sensor in an integrated device that is used for sample analysis are described. At least one semiconductor film of a selected material and crystal morphology is located between a waveguide and a sensor in an integrated device that is formed on a substrate. Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material.

公开(公告)号：US20220011486A1

公开(公告)日：2022-01-13

申请号：US17482692

申请日：2021-09-23

Applicant: Quantum-Si Incorporated

Inventor： Michael Bellos ,  Faisal R. Ahmad ,  James Beach ,  Michael Coumans ,  Sharath Hosali ,  Ali Kabiri ,  Kyle Preston ,  Gerard Schmid ,  Bing Shen ,  Jonathan M. Rothberg

IPC: G02B5/22 ,  G01N21/64 ,  G02B5/00

Abstract: Apparatus and methods relating to attenuating excitation radiation incident on a sensor in an integrated device that is used for sample analysis are described. At least one semiconductor film of a selected material and crystal morphology is located between a waveguide and a sensor in an integrated device that is formed on a substrate. Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material.