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    Waveguide excitation uniformity
    2.
    发明授权
    Waveguide excitation uniformity 有权

    公开(公告)号：US12188868B2

    公开(公告)日：2025-01-07

    申请号：US17149605

    申请日：2021-01-14

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Sharath Hosali ,  James Beach ,  Kyle Preston ,  Ali Kabiri ,  Bing Shen

    IPC: G01N21/64 ,  B01L3/00 ,  C12Q1/6816 ,  G02B6/122 ,  G02B6/14

    Abstract: Systems and methods for optical power distribution within an integrated device, in a substantially uniform manner, to a large number of sample wells and/or other photonic elements. The integrated device and related instruments and systems may be used to analyze samples in parallel. The integrated device may include a grating coupler configured to receive light from an excitation source and optically couple with multiple waveguides configured to couple with sample wells. Vertical extents of optical modes of individual waveguides may be modulated to adjust confinement of light within the waveguides. This modulation may enable more uniform distribution of excitation light to the sample wells, improve excitation efficiency, and prevent overpower on regions of the integrated device.

    Optical microdisks for integrated devices
    3.
    发明授权
    Optical microdisks for integrated devices 有权

    公开(公告)号：US11977257B2

    公开(公告)日：2024-05-07

    申请号：US17893101

    申请日：2022-08-22

    Applicant: Quantum-Si Incorporated

    Inventor： Ali Kabiri ,  Bing Shen ,  Gerard Schmid ,  James Beach ,  Kyle Preston ,  Sharath Hosali

    IPC: G02B6/122 ,  G02B6/12 ,  G02B6/136

    CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B2006/12109 ,  G02B2006/12138

    Abstract: Apparatus and methods for improving optical signal collection in an integrated device are described. A microdisk can be formed in an integrated device and increase collection and/or concentration of radiation incident on the microdisk and re-radiated by the microdisk. An example integrated device that can include a microdisk may be used for analyte detection and/or analysis. Such an integrated device may include a plurality of pixels, each having a reaction chamber for receiving a sample to be analyzed, an optical microdisk, and an optical sensor configured to detect optical emission from the reaction chamber. The microdisk can comprise a dielectric material having a first index of refraction that is embedded in one or more surrounding materials having one or more different refractive index values.

    Integrated sensor for multi-dimensional signal analysis
    5.
    发明授权
    Integrated sensor for multi-dimensional signal analysis 有权

    公开(公告)号：US11719639B2

    公开(公告)日：2023-08-08

    申请号：US17190331

    申请日：2021-03-02

    Applicant: Quantum-Si Incorporated

    Inventor： Gerard Schmid ,  Dajiang Yang ,  Eric A. G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston ,  Brian Reed

    IPC: G01N21/64 ,  H01L27/146

    CPC classification number: G01N21/6454 ,  G01N21/6408 ,  G01N21/6428 ,  H01L27/14603 ,  G01N2021/6463

    Abstract: Some aspects relate to an integrated circuit, comprising at least one photodetection region configured to generate charge carriers responsive to incident photons emitted from a sample, at least one charge storage region configured to receive the charge carriers from the photodetection region, and at least one controller configured to obtain information about the incident photons, the information comprising at least one member selected from the group comprising pulse duration and interpulse duration and at least one member selected from the group comprising wavelength information, luminescence lifetime information, and intensity information. In some embodiments, the information comprises at least three, four, and/or five members selected from the group comprising wavelength information, luminescence lifetime information, intensity information, pulse duration information, and interpulse duration information. In some embodiments, the information obtained may be used to identify the sample.

    Optical nanostructure rejecter for an integrated device and related methods
    7.
    发明授权
    Optical nanostructure rejecter for an integrated device and related methods 有权

    公开(公告)号：US12203853B2

    公开(公告)日：2025-01-21

    申请号：US18320964

    申请日：2023-05-19

    Applicant: Quantum-Si Incorporated

    Inventor： Ali Kabiri ,  Bing Shen ,  James Beach ,  Kyle Preston ,  Gerard Schmid

    IPC: G01N21/64 ,  H01L27/146

    Abstract: Apparatus and methods relating to photonic bandgap optical nanostructures are described. Such optical nanostructures may exhibit prohibited photonic bandgaps or allowed photonic bands, and may be used to reject (e.g., block or attenuate) radiation at a first wavelength while allowing transmission of radiation at a second wavelength. Examples of photonic bandgap optical nanostructures includes periodic and quasi-periodic structures, with periodicity or quasi-periodicity in one, two, or three dimensions and structural variations in at least two dimensions. Such photonic bandgap optical nanostructures may be formed in integrated devices that include photodiodes and CMOS circuitry arranged to analyze radiation received by the photodiodes.

    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION
    9.
    发明公开
    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION 审中-公开

    公开(公告)号：US20240096924A1

    公开(公告)日：2024-03-21

    申请号：US18520502

    申请日：2023-11-27

    Applicant: Quantum-Si Incorporated

    Inventor： Eric A.G. Webster ,  Changhoon Choi ,  Dajiang Yang ,  Xin Wang ,  Todd Rearick ,  Kyle Preston ,  Ali Kabiri ,  Gerard Schmid

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14683

    Abstract: Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

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