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公开(公告)号:US3749383A
公开(公告)日:1973-07-31
申请号:US3749383D
申请日:1971-04-29
Applicant: RCA CORP
CPC classification number: C23C14/34 , B01J3/04 , Y10S414/135
Abstract: Apparatus for growing epitaxial layers of semiconductor material on substrate wafers at a relatively high production rate comprises a reactor furnace and a loading device cooperatively associated with it. An elevator is disposed to raise, and to lower, a holder for the wafers through an opening in the bottom of the heating chamber of the furnace. The loading device comprises an arm disposed for rotation on a carriage that is slidable towards and away from the elevator. The holder is adapted to be disposed on either end of the rotatable arm for delivery to, and for removal from, the furnace. When the loading device is disposed for movement between two furnaces, three wafer holders can be used for processing wafers at a high rate of production.
Abstract translation: 用于在相对高的生产率下在衬底晶片上生长半导体材料的外延层的装置包括与其协作地相关联的反应器炉和加载装置。 升降机设置成通过炉的加热室的底部的开口升高和降低晶片的保持器。 装载装置包括一个臂,它设置成能够在电梯上朝向和远离的方向滑动的滑架上旋转。 保持器适于设置在可旋转臂的任一端上,用于输送到炉中并从炉中取出。 当装载装置设置为在两个炉之间移动时,可以使用三个晶片保持器以高生产率处理晶片。
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公开(公告)号:US3836825A
公开(公告)日:1974-09-17
申请号:US29553672
申请日:1972-10-06
Applicant: RCA CORP
Inventor: HALL W , KOSKULITZ J
IPC: H01L23/34 , H01L21/56 , H01L23/16 , H01L23/28 , H01L23/367 , H01L23/42 , H01L23/433 , H01L1/12
CPC classification number: H01L23/4334 , H01L21/565 , H01L23/16 , H01L23/367 , H01L23/42 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01019 , H01L2924/01039 , H01L2924/01057 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012 , H01L2924/00
Abstract: An integrated circuit chip having circuit elements capable of relatively high power operation is encapsulated in a body of polymeric material having the form of an elongated prism. Conductors are electrically coupled to the circuit elements in the chip and extend outwardly of the body through a relatively long side thereof. A heat conducting stud is anchored in the body and is thermally coupled to the chip. The stud extends outwardly of the package through another of its relatively long sides. A heat sink may be coupled to the stud outside of the package.
Abstract translation: 具有能够相对高功率操作的电路元件的集成电路芯片被封装在具有细长棱镜形式的聚合材料体中。 导体电耦合到芯片中的电路元件,并通过其相对较长的一侧向外延伸。 导热柱被锚定在主体中并且热耦合到芯片。 螺柱通过其相对长的侧面中的另一个延伸到包装外面。 散热器可以联接到包装外部的螺柱。
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