公开(公告)号：US3811963A

公开(公告)日：1974-05-21

申请号：US33352873

申请日：1973-02-20

Applicant: RCA CORP

Inventor： HAWRYLO F ,  PANKOVE J

IPC: C30B19/04 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/04 ,  C30B29/406 ,  H01L21/02387 ,  H01L21/0242 ,  H01L21/0254 ,  Y10S117/907

Abstract: AN EPITAXIAL LAYER OF GALLIUM NITRIDE IS DEPOSITED FROM A MELT CONTAINING A SMALL CONCENTRATION OF GALLIUM AND A LARGE CONCENTRATION OF A METAL OR MIXTURE OF METALS WHICH DO NOT FORM A STABLE COMPOUND WITH NITROGEN. THE MELT IS SUBJECTED TO AN ATMOSPHERE CONTAINING NITROGEN SO AS TO FORM GALLIUM NITRITE IN THE MELT. A SUBSTRATE IS BROUGHT INTO CONTACT WITH THE GALLIUM NITRITE CONTAINING MELT AND THE MELT IS COOLED TO DEPOSIT GALLIUM NITRITE FROM THE MELT ONTO THE SUBSTRATE. THE SUBSTRATE IS THEN SEPARATED FROM THE MELT.

公开(公告)号：US3855607A

公开(公告)日：1974-12-17

申请号：US36466573

申请日：1973-05-29

Applicant: RCA CORP

Inventor： KRESSEL H ,  LOCKWOOD H ,  HAWRYLO F

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H05B33/00

CPC classification number: H01S5/32 ,  H01S5/321 ,  H01S5/32308 ,  H01S2301/18

Abstract: A body of single crystalline semiconductor material having a radiation generating region sandwiched between two other regions. the junctions between the intermediate radiation generating region and each of the outer two regions are heterojunctions which extend to an edge of the body. The intermediate region is of a material having a bandgap energy which is lower than that of the materials of the other two regions but the difference between the bandgap energy of the intermediate region and one of the outer regions is smaller than the bandgap energy between the intermediate region and the other of the outer regions.

Abstract translation: 一种具有夹在两个其它区域之间的辐射产生区的单晶半导体材料体。 中间辐射产生区域和外部两个区域中的每一个之间的接合部是延伸到身体边缘的异质结。 中间区域是具有比其它两个区域的材料低的带隙能量的材料，但是中间区域的一个与外部区域的带隙能量之间的差小于中间区域之间的带隙能量 区域和其他外部区域。