公开(公告)号：US3755671A

公开(公告)日：1973-08-28

申请号：US3755671D

申请日：1972-09-29

Applicant: RCA CORP

Inventor： LOCKWOOD H

IPC: H01L27/20 ,  H01L29/84 ,  H01L33/00 ,  H01L41/22 ,  H01J37/00

CPC classification number: H01L33/00 ,  H01L27/20 ,  H01L29/84 ,  H01L41/253 ,  H01S5/0607 ,  H01S5/1234 ,  Y10T29/42

Abstract: Semiconductor crystalline materials which lack a center of symmetry but which contain mobile carriers are provided with piezoelectric properties by bombarding the materials with electrons. A body of such semiconductor material can be bombarded with electrons on selected portions thereof so that the unbombarded portions of the body have semiconductor properties and the bombarded portions have piezoelectric properties.

Abstract translation: 缺少对称中心但含有移动载体的半导体结晶材料通过用电子轰击材料来提供压电性能。 这样的半导体材料的主体可以在其选定部分上用电子轰击，使得本体的未投入部分具有半导体特性，并且被轰击部分具有压电特性。

公开(公告)号：US3753801A

公开(公告)日：1973-08-21

申请号：US3753801D

申请日：1971-12-08

Applicant: RCA CORP

Inventor： LOCKWOOD H ,  MARINELLI D

IPC: C30B19/00 ,  C30B19/06 ,  C30B19/10 ,  H01L21/00 ,  H01L21/208 ,  H01L7/38 ,  B05C3/02

CPC classification number: C30B19/063 ,  C30B19/10 ,  C30B19/106 ,  H01L21/00

Abstract: One or more epitaxial layers of a semiconductor material are deposited on a substrate by providing for each epitaxial layer to be deposited a separate solution of a semiconductor material dissolved in a molten metal solvent. Each of the solutions is of a small volume and a weight is provided on each solution to spread the solution out in the form of a thin layer. The substrate is brought into contact with the solution and the solution is cooled to deposit the epitaxial layer on the substrate. Since the solution is in the form of a thin layer, only a minimum of platelets of the semiconductor material are formed in the solution during the deposition of the epitaxial layer so that the epitaxial layer has a smooth, even surface. To deposit a plurality of epitaxial layers on the substrate, the substrate is successively brought into contact with each solution which is then cooled to deposit an epitaxial layer. Each solution may be exactly saturated with the semiconductor material by bringing a body of semiconductor material into contact with the solution prior to bringing the substrate into contact with the solution.

Abstract translation: 将半导体材料的一个或多个外延层沉积在衬底上，为每个外延层沉积溶解在熔融金属溶剂中的半导体材料的单独溶液。 每种溶液都是小体积的，并且在每个溶液上提供重量以将溶液以薄层的形式传播出来。 使衬底与溶液接触，并将溶液冷却以将外延层沉积在衬底上。 由于溶液是薄层的形式，因此在外延层的沉积期间仅在溶液中形成最小的半导体材料的片状，使得外延层具有光滑的均匀的表面。 为了在衬底上沉积多个外延层，衬底依次与每个溶液接触，然后冷却沉积外延层。 在使衬底与溶液接触之前，通过使半导体材料体与溶液接触，可以使半导体材料完全饱和。

公开(公告)号：US3741825A

公开(公告)日：1973-06-26

申请号：US3741825D

申请日：1971-07-08

Applicant: RCA CORP

Inventor： LOCKWOOD H ,  ETTENBERG M

IPC: C30B19/06 ,  H01L21/00 ,  H01L7/38

CPC classification number: C30B19/063 ,  H01L21/00

Abstract: ONE OR MORE EPITAXIAL LAYERS OF A SEMICONDUCTOR MATERIAL ARE DISPOSED ON A SUBSTRATE BY PROVIDING FOR EACH EPITAXIAL LAYER TO BE DEPOSITED A SEPARATE SOLUTION OF A SEMICONDUCTOR MATERIAL DISSOLVED IN A MOLTEN METAL SOLVENT WITH EACH SOLUTION BEING UNSATURATED WITH THE SEMICONDUCTOR MATERIAL, A BODY OF THE SEMICONDUCTOR MATERIAL IS BROUGHT INTO CONTACT WITH THE SOLUTION AND SOME OF THE BODY IS DISSOLVED IN THE SOLUTION SO AS TO EXACTLY SATURATE THE SOLUTION. THE BODY IS THEN REMOVED FROM THE EXA BROUGHT INTO CONTACT WITH THE SOLUTION AND THE SUBSTRATE COOLED TO DEPOSIT THE EPITAXIAL LAYER ON THE SUBSTRATE, TO DEPOSIT A PLURALITY OF EPITAXIAL LAYERS ON THE SUBSTRATE, THE SUBSTRATE IS SUCCESSIVELY BROUGHT INTO CONTACT WITH EACH SOLUTION WITH THE BODY OF SEMICONDUCTOR MATERIAL PRECEDING THE SUBSTRATE INTO EACH SOLUTION SO THAT EACH SOLUTION IS EXACTLY SATURATED WITH THE SEMICONDUCTOR MATERIAL WHEN THE SUBSTRATE IS BROUGHT INTO THE SOLUTION.

公开(公告)号：US3855607A

公开(公告)日：1974-12-17

申请号：US36466573

申请日：1973-05-29

Applicant: RCA CORP

Inventor： KRESSEL H ,  LOCKWOOD H ,  HAWRYLO F

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H05B33/00

CPC classification number: H01S5/32 ,  H01S5/321 ,  H01S5/32308 ,  H01S2301/18

Abstract: A body of single crystalline semiconductor material having a radiation generating region sandwiched between two other regions. the junctions between the intermediate radiation generating region and each of the outer two regions are heterojunctions which extend to an edge of the body. The intermediate region is of a material having a bandgap energy which is lower than that of the materials of the other two regions but the difference between the bandgap energy of the intermediate region and one of the outer regions is smaller than the bandgap energy between the intermediate region and the other of the outer regions.

Abstract translation: 一种具有夹在两个其它区域之间的辐射产生区的单晶半导体材料体。 中间辐射产生区域和外部两个区域中的每一个之间的接合部是延伸到身体边缘的异质结。 中间区域是具有比其它两个区域的材料低的带隙能量的材料，但是中间区域的一个与外部区域的带隙能量之间的差小于中间区域之间的带隙能量 区域和其他外部区域。

公开(公告)号：US3785884A

公开(公告)日：1974-01-15

申请号：US3785884D

申请日：1972-07-21

Applicant: RCA CORP

Inventor： LOCKWOOD H

IPC: C30B19/08 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/08 ,  Y10S117/90

Abstract: A layer of a semiconductor material is epitaxially deposited on a substrate by liquid phase epitaxy wherein a heated solution of the semiconductor material dissolved in a molten solvent is brought into contact with a surface of the substrate and the solution and substrate are cooled to deposit the semiconductor material on the substrate. During the cooling of the solution and the substrate heat is radiated from the substrate faster than from the solution so that the substrate is at a temperature slightly below the temperature of the solution. The heat radiation differential can be achieved by carrying out the method in a container having a heat radiation window therethrough over which the substrate is mounted.