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1.发明授权
公开(公告)号：US3848141A
公开(公告)日：1974-11-12
申请号：US34486273
申请日：1973-03-26
Applicant: RCA CORP
Inventor： STERZER F
CPC classification number: H03H11/265
Abstract: Presented is a semiconductor delay line which makes use of the transferred electron effect in order to provide useful delays in information processing applications at multigigabit rates.
Abstract translation: 提出了利用转移的电子效应的半导体延迟线，以便以千兆位速率在信息处理应用中提供有用的延迟。
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公开(公告)号：US3805125A
公开(公告)日：1974-04-16
申请号：US34666973
申请日：1973-03-30
Applicant: RCA CORP
Inventor： STERZER F
Abstract: The memory element makes use of two transferred electron devices, at least one of which is notched. The transferred electron devices are connected in a feedback arrangement in order to trigger one another. The memory element can be used for processing extremely high speed signals.
Abstract translation: 存储元件利用两个转移的电子器件，其中至少一个是缺口的。 转移的电子器件以反馈布置连接以便彼此触发。 存储元件可用于处理极高速度信号。
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公开(公告)号：US3761264A
公开(公告)日：1973-09-25
申请号：US3761264D
申请日：1971-10-12
Applicant: RCA CORP
Inventor： STERZER F
CPC classification number: G03F7/095 , G03F7/2002
Abstract: A DETAILED PATTERN ON A PHOTOMASK IS DEFINED, IN REDUCED SIZE, ON A SURFACE OF A BODY BY A NOVEL PHOTOLITHOGRAPHIC PROCESS EMPLOYING TWO SUCCESSIVE FRESNEL DIFFRACTION PRINTINGS. THE SURFACE OF THE BODY IS PROVIDED WITH THREE LAYERS, A LOWER PHOTORESIST, A METAL, AND AN UPPER PHOTORESIST, RESPECTIVELY. THE UPPER PHOTORESIST IS EXPOSED WITH A FRESNEL DIFFRACTION PATTERN OF THE DETAILED PATTERN FOR A TIME TO ACTIVATE IT WITH ONLY THE GREATER INTENSITIES OF LIGHT OF THE FRESNEL DIFFRACTION PATTERN. THE DEVELOPED UPPER PHOTORESIST DEFINES THE DETAILED PATTERN, IN REDUCED SIZE, ON THE LAYER OF METAL. THE LOWER PHOTORESIST IS SIMILARLY EXPOSED ND ACTIVATED THROUGH AN ETCHED MASK OF THE LAYER OF METAL, AS DEFINED BY THE UPPER PHOTORESIST. WHEN DEVELOPED, THE LOWER PHOTORESIST DEFINES THE DETAILED PATTERN, STILL FURTHER REDUCED IN SIZE, ON THE SURFACE OF THE BODY.
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