公开(公告)号：US11961909B2

公开(公告)日：2024-04-16

申请号：US17686042

申请日：2022-03-03

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Hideki Sugiyama

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7836 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/0847 ,  H01L29/6659

摘要： Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region. At the vicinity of both end portions of the active region in the first direction, a first region and a second region having the same conductivity type as the well region and having impurity concentration higher than that of the well region are formed in the well region. The first region and the second region are spaced from each other in a second direction perpendicular to the first direction, and at least a portion of each of them is located under the gate electrode. The first region and the second region are not formed at the center portion of the active region in the first direction.

公开(公告)号：US09831093B2

公开(公告)日：2017-11-28

申请号：US15236472

申请日：2016-08-14

申请人： Renesas Electronics Corporation

发明人： Kentaro Saito ,  Hideki Sugiyama ,  Hiraku Chakihara ,  Yoshiyuki Kawashima

IPC分类号： H01L27/06 ,  H01L21/28 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11573 ,  H01L49/02

CPC分类号： H01L21/28282 ,  H01L27/0629 ,  H01L27/11573 ,  H01L28/60 ,  H01L29/66833 ,  H01L29/792

摘要： In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

公开(公告)号：US10002768B2

公开(公告)日：2018-06-19

申请号：US15796621

申请日：2017-10-27

申请人： Renesas Electronics Corporation

发明人： Kentaro Saito ,  Hideki Sugiyama ,  Hiraku Chakihara ,  Yoshiyuki Kawashima

IPC分类号： H01L21/28 ,  H01L49/02 ,  H01L27/11573 ,  H01L27/06 ,  H01L29/66 ,  H01L29/792

CPC分类号： H01L29/40117 ,  H01L27/0629 ,  H01L27/11573 ,  H01L28/60 ,  H01L29/66833 ,  H01L29/792

摘要： In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.