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公开(公告)号：US20230318595A1
公开(公告)日：2023-10-05
申请号：US17708862
申请日：2022-03-30
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroki NAGATOMI , Makoto TANAKA
CPC classification number: H03K17/145 , G01K7/01 , B60R16/0207 , H03K17/063 , H03F3/45 , G05F3/26
Abstract: A semiconductor device includes a first transistor that flows a load current to an external load; a current generation circuit that outputs a current corresponding to a power consumption generated in an overheat detection target when the load current flows the overheat detection target; a resistor-capacitor-network comprising a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance of the overheat detection target, and having one end coupled to the current generation circuit; an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor-network; and a voltage source that sets a voltage of the connection point of the current generation circuit and the resistor-capacitor-network to a predetermined voltage.
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公开(公告)号：US20220407508A1
公开(公告)日：2022-12-22
申请号：US17349576
申请日：2021-06-16
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroki NAGATOMI , Makoto TANAKA
Abstract: A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.
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