公开(公告)号：US09437644B2

公开(公告)日：2016-09-06

申请号：US14528724

申请日：2014-10-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Katsumi Eikyu ,  Atsushi Sakai ,  Hiroyuki Arie

IPC: H01L27/146 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1804

Abstract: To provide a semiconductor device having a photoelectric conversion element having a high sensitivity, causing less blooming, and capable of providing a highly reliable image. The semiconductor device has a semiconductor substrate, a first p type epitaxial layer, a second p type epitaxial layer, and a first photoelectric conversion element. The first p type epitaxial layer is formed over the main surface of the semiconductor substrate. The second p type epitaxial layer is formed so as to cover the upper surface of the first p type epitaxial layer. The first photoelectric conversion element is formed in the second p type epitaxial layer. The first and second p type epitaxial layers are each made of silicon and the first p type epitaxial layer has a p type impurity concentration higher than that of the second p type epitaxial layer.

Abstract translation: 为了提供具有高灵敏度的光电转换元件的半导体器件，引起较少的起霜，并且能够提供高可靠性的图像。 半导体器件具有半导体衬底，第一p型外延层，第二p型外延层和第一光电转换元件。 第一p型外延层形成在半导体衬底的主表面上。 形成第二p型外延层以覆盖第一p型外延层的上表面。 第一光电转换元件形成在第二p型外延层中。 第一和第二p型外延层各自由硅制成，并且第一p型外延层的p型杂质浓度高于第二p型外延层的p型杂质浓度。