公开(公告)号：US20130134549A1

公开(公告)日：2013-05-30

申请号：US13725389

申请日：2012-12-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuma ONISHI ,  Yoshitaka OTSU ,  Hiroshi KIMURA ,  Tetsuya NITTA ,  Shinichiro YANAGI ,  Katsumi MORII

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.

Abstract translation: 一种半导体器件，其通过简单的工艺消除了对高填充性的需要及其制造方法。 在半导体衬底的表面上完成包括源极区和漏极区的高击穿电压横向MOS晶体管。 在半导体衬底的表面中制造在平面图中观察时围绕晶体管的沟槽。 在晶体管和沟槽中形成绝缘膜，以覆盖晶体管并在沟槽中形成气隙空间。 到达晶体管的源极区域和漏极区域的接触孔分别制成层间绝缘膜。