公开(公告)号：US20210159331A1

公开(公告)日：2021-05-27

申请号：US17095241

申请日：2020-11-11

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Atsushi SAKAI ,  Satoru TOKUDA ,  Ryuuji UMEMOTO ,  Katsumi EIKYU ,  Hiroshi YANAGIGAWA

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06

Abstract: A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion. The termination portion includes a connection trench gate provided along a first direction. The cell portion includes: a plurality of first column regions provided along a second direction intersecting the first direction; and a plurality of trench gates provided along the second direction such that two trench gates are arranged between the two adjacent first column regions. The plurality of trench gates extend from the cell portion to the termination portion and are connected to the connection trench gate. The plurality of first column regions extend from the cell portion to the termination portion, and the termination portion includes a plurality of second column regions different from the plurality of first column regions.