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公开(公告)号：US20140306766A1
公开(公告)日：2014-10-16
申请号：US14049433
申请日：2013-10-09
Applicant: RF Micro Devices, Inc.
Inventor： Jinsung Choi , Marcelo Jorge Franco
IPC: H03F1/32
CPC classification number: H03F3/19 , H03F1/0261
Abstract: Integrated pulse shaping biasing circuitry for a radio frequency (RF) power amplifier includes a square wave signal generator and an inverted ramp signal generator. The square wave signal generator and the inverted ramp signal generator are coupled in parallel between an input node and current summation circuitry. The square wave signal generator generates a square wave signal. The inverted ramp signal generator generates an inverted ramp signal. The current summation circuitry receives the generated square wave signal and the inverted ramp signal, and combines the signals to generate a pulse shaped biasing signal for an RF power amplifier. The square wave signal generator, the inverted ramp signal generator, and the current summation circuitry are monolithically integrated on a single semiconductor die.
Abstract translation: 用于射频（RF）功率放大器的集成脉冲整形偏置电路包括方波信号发生器和反相斜坡信号发生器。 方波信号发生器和反相斜坡信号发生器在输入节点和电流求和电路之间并联耦合。 方波信号发生器产生方波信号。 反相斜坡信号发生器产生反相斜坡信号。 电流求和电路接收产生的方波信号和反相斜坡信号，并组合该信号以产生用于RF功率放大器的脉冲形偏置信号。 方波信号发生器，反相斜坡信号发生器和电流求和电路单片集成在单个半导体管芯上。
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公开(公告)号：US09520837B1
公开(公告)日：2016-12-13
申请号：US15065312
申请日：2016-03-09
Applicant: RF Micro Devices, Inc.
Inventor： Jinsung Choi , Marcelo Jorge Franco
CPC classification number: H03F1/0222 , H03F1/0261 , H03F1/32 , H03F3/19 , H03F3/195 , H03F3/2173 , H03F3/24 , H03F3/245 , H03F2200/18 , H03F2200/333 , H03F2200/451 , H03F2200/528 , H04B2001/0408 , H04L25/03834
Abstract: Pulse shaping biasing circuitry includes square wave generator circuitry and inverse ramp signal generator circuitry. The square wave generator circuitry is coupled between an input node and signal summation circuitry, and is configured to generate a square wave signal. The inverse ramp signal generator circuitry is coupled in parallel with the square wave generator circuitry and configured to generate an inverted ramp signal based on a supply voltage and a temperature. By generating the inverted ramp signal based on the supply voltage and temperature, the pulse shaping biasing circuitry may compensate an RF power amplifier operated in a pulsed mode such that an error vector magnitude thereof is minimized even as the supply voltage provided to the RF power amplifier and the temperature change.
Abstract translation: 脉冲整形偏置电路包括方波发生器电路和反斜波信号发生器电路。 方波发生器电路耦合在输入节点和信号求和电路之间，并被配置为产生方波信号。 反斜坡信号发生器电路与方波发生器电路并联耦合，并被配置为基于电源电压和温度产生反相斜坡信号。 通过基于电源电压和温度产生反向斜坡信号，脉冲整形偏置电路可以补偿以脉冲模式操作的RF功率放大器，使得即使提供给RF功率放大器的电源电压，其误差矢量幅度也被最小化 和温度变化。
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公开(公告)号：US09160283B2
公开(公告)日：2015-10-13
申请号：US14049433
申请日：2013-10-09
Applicant: RF Micro Devices, Inc.
Inventor： Jinsung Choi , Marcelo Jorge Franco
CPC classification number: H03F3/19 , H03F1/0261
Abstract: Integrated pulse shaping biasing circuitry for a radio frequency (RF) power amplifier includes a square wave signal generator and an inverted ramp signal generator. The square wave signal generator and the inverted ramp signal generator are coupled in parallel between an input node and current summation circuitry. The square wave signal generator generates a square wave signal. The inverted ramp signal generator generates an inverted ramp signal. The current summation circuitry receives the generated square wave signal and the inverted ramp signal, and combines the signals to generate a pulse shaped biasing signal for an RF power amplifier. The square wave signal generator, the inverted ramp signal generator, and the current summation circuitry are monolithically integrated on a single semiconductor die.
Abstract translation: 用于射频（RF）功率放大器的集成脉冲整形偏置电路包括方波信号发生器和反相斜坡信号发生器。 方波信号发生器和反相斜坡信号发生器在输入节点和电流求和电路之间并联耦合。 方波信号发生器产生方波信号。 反相斜坡信号发生器产生反相斜坡信号。 电流求和电路接收产生的方波信号和反相斜坡信号，并组合该信号以产生用于RF功率放大器的脉冲形偏置信号。 方波信号发生器，反相斜坡信号发生器和电流求和电路单片集成在单个半导体管芯上。
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