公开(公告)号：US20130230643A1

公开(公告)日：2013-09-05

申请号：US13863808

申请日：2013-04-16

Applicant: RF MICRO DEVICES, INC.

Inventor： Merrill Albert Hatcher, JR. ,  Jayanti Jaganatha Rao ,  John Robert Siomkos

IPC: H03H3/08

CPC classification number: H01L41/0533 ,  C23C16/403 ,  C23C16/45525 ,  H03H3/08 ,  H03H9/02929

Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

Abstract translation: 本文公开了声波装置和在声波装置上涂覆氧化铝（Al 2 O 3）保护膜的方法。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在声波装置的表面上沉积非常薄的氧化铝层。 因此，均匀的膜不会使声波装置的操作显着失真。

公开(公告)号：US20130038390A1

公开(公告)日：2013-02-14

申请号：US13654894

申请日：2012-10-18

Applicant: RF MICRO DEVICES, INC.

Inventor： John R. Siomkos ,  Merrill Albert Hatcher, JR. ,  Jayanti Jaganatha Rao

IPC: H03F3/04

CPC classification number: H01L23/3185 ,  H01L23/291 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Abstract translation: 功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。

公开(公告)号：US20130221800A1

公开(公告)日：2013-08-29

申请号：US13863841

申请日：2013-04-16

Applicant: RF Micro Devices, Inc.

Inventor： Merrill Albert Hatcher, JR. ,  Jayanti Jaganatha Rao ,  John Robert Siomkos

IPC: H01L41/053

CPC classification number: H01L41/0533 ,  C23C16/403 ,  C23C16/45525 ,  H03H3/08 ,  H03H9/02929

Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.