公开(公告)号：US20230238317A1

公开(公告)日：2023-07-27

申请号：US18295111

申请日：2023-04-03

Applicant: ROHM CO., LTD.

Inventor： Bin ZHANG ,  Akinori NII ,  Taro NISHIOKA

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/49861 ,  H01L23/49866 ,  H01L21/485 ,  H01L23/3121

Abstract: There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.

公开(公告)号：US20230110154A1

公开(公告)日：2023-04-13

申请号：US17911101

申请日：2021-03-18

Applicant: ROHM CO., LTD.

Inventor： Bin ZHANG ,  Kenji FUJII ,  Akinori NII

IPC: H01L21/50 ,  H01L23/13 ,  H01L23/495 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor element, a conducting member, a conductive bonding material, a resin member and a first barrier layer. The semiconductor element includes an element first surface and an element second surface facing away from each other in a thickness direction, with the element first surface provided with an electrode. The conducting member includes an obverse surface facing the element first surface and a reverse surface facing away from the obverse surface. The conductive bonding material is disposed between the electrode and the obverse surface of the conducting member. The resin member covers at least a portion of the conducting member, the semiconductor element and the conductive bonding material. The first barrier layer is disposed between the electrode and the conductive bonding material to prevent a reaction between the electrode and the conductive bonding material.

公开(公告)号：US20240290693A1

公开(公告)日：2024-08-29

申请号：US18659791

申请日：2024-05-09

Applicant: Rohm Co., Ltd.

Inventor： Bin ZHANG

IPC: H01L23/495 ,  H01L23/31

CPC classification number: H01L23/4951 ,  H01L23/3107

Abstract: A semiconductor device A10 includes: a semiconductor element 30 having an element obverse surface 30a and an element obverse surface 30a faces away from each other in a z direction and including an electrode 34 formed on the element obverse surface 30a and an electrode terminal 36A in contact with the electrode 34 and protruding in the z direction; a lead 10A electrically connected to the semiconductor element 30 and having an obverse surface 101 and a reverse surface 102 faces away from each other in the z direction; and a sealing resin 40 covering the semiconductor element 30. The lead 10A includes a body 11 on a side toward the reverse surface 102 with respect to the obverse surface 101. The electrode terminal 36A has a bonding surface 365 facing the lead 10. The bonding surface 365 includes an overhanging portion 365a not overlapping with the body 11 as viewed in the z direction.