公开(公告)号：US20250022796A1

公开(公告)日：2025-01-16

申请号：US18900908

申请日：2024-09-30

Applicant: ROHM CO., LTD.

Inventor： Seigo MORI ,  Yuki NAKANO ,  Keigo MINODE

IPC: H01L23/522 ,  H01L27/088 ,  H01L29/16 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a chip having a main surface, a trench resistance structure formed in the main surface, a gate pad that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the trench resistance structure, and a gate wiring line that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the gate pad via the trench resistance structure.

公开(公告)号：US20230197786A1

公开(公告)日：2023-06-22

申请号：US17921993

申请日：2021-07-16

Applicant: ROHM CO., LTD.

Inventor： Seigo MORI ,  Kenji YAMAMOTO ,  Hiroaki SHIRAGA ,  Yuki NAKANO ,  Keigo MINODE

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/16 ,  H01L29/417 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/0869 ,  H01L21/0465 ,  H01L21/0475 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/41741 ,  H01L29/66068

Abstract: A SiC semiconductor device includes a SiC chip having a main surface, a trench gate structure formed at the main surface, a trench source structure formed at the main surface away from the trench gate structure in one direction, an insulating film covering the trench gate structure and the trench source structure above the main surface, a gate main surface electrode formed on the insulating film and a gate wiring that is led out from the gate main surface electrode onto the insulating film such as to cross the trench gate structure and the trench source structure in the one direction, and that is electrically connected to the trench gate structure through the insulating film, and that faces the trench source structure with the insulating film between the trench source structure and the gate wiring.

公开(公告)号：US20250015078A1

公开(公告)日：2025-01-09

申请号：US18895440

申请日：2024-09-25

Applicant: ROHM CO., LTD.

Inventor： Seigo MORI ,  Yuki NAKANO ,  Keigo MINODE

IPC: H01L27/06 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor device includes a chip that has a main surface, a gate resistor that includes a trench resistor structure formed in the main surface, a gate pad that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the trench resistor structure, and a gate wiring that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the gate pad via the trench resistor structure.