SEMICONDUCTOR LIGHT-EMITTING DEVICE
    1.
    发明公开

    公开(公告)号:US20230378415A1

    公开(公告)日:2023-11-23

    申请号:US18296819

    申请日:2023-04-06

    Applicant: ROHM CO., LTD.

    Inventor: Kenya HASHIMOTO

    CPC classification number: H01L33/62 H01L24/48 H01L25/13

    Abstract: A semiconductor light-emitting device includes: a substrate with a wiring formed thereon; and a semiconductor light-emitting element. The substrate has first and second main surfaces in its thickness direction, first and second side surfaces in a first direction, third and fourth side surfaces in a second direction, and a first concave groove formed between the first and the third side surfaces. The first side surface has a first edge in contact with the first concave groove, the second side surface has a second edge, and the third side surface has a third edge in contact with the first concave groove and a fourth edge. The wiring includes a first groove wiring formed in the first concave groove and a first distance between the first edge and the third edge is larger than a second distance between the second edge and the fourth edge.

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240234666A1

    公开(公告)日:2024-07-11

    申请号:US18513948

    申请日:2023-11-20

    Applicant: ROHM CO., LTD.

    Inventor: Kenya HASHIMOTO

    CPC classification number: H01L33/62 H01L2933/0066

    Abstract: A light emitting device comprising: a base material including a first main surface and a second main surface, and a first end portion and a second end portion; a light emitting element mounted on the first main surface of the base material and including a first electrode and a second electrode; a first electrode terminal and a second electrode terminal; a covering material; and a sealing material that seals the light emitting element, wherein the first electrode terminal is formed to extend in a first direction, wherein the second electrode terminal is formed to be separated from the first electrode terminal by a distance, wherein the covering material includes: a first covering material that partially covers the first electrode terminal; and a second covering material that partially covers the second electrode terminal, and wherein the first covering material and the second covering material are formed to be separated.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请

    公开(公告)号:US20200350478A1

    公开(公告)日:2020-11-05

    申请号:US16933756

    申请日:2020-07-20

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    4.
    发明申请

    公开(公告)号:US20190189878A1

    公开(公告)日:2019-06-20

    申请号:US16214990

    申请日:2018-12-10

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

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