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32 条记录 (耗时 0.016 秒)

    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE
    1.
    发明申请
    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200168985A1

    公开(公告)日：2020-05-28

    申请号：US16619440

    申请日：2018-06-26

    申请人： ROHM CO., LTD.

    发明人： Toshikazu MUKAI ,  Jaeyoung KIM ,  Tomoichiro TOYAMA

    IPC分类号： H01Q1/38 ,  H01L27/06 ,  H01L23/00 ,  H01L23/66 ,  H01L29/88 ,  H01Q9/16

    摘要： A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20150280094A1

    公开(公告)日：2015-10-01

    申请号：US14695915

    申请日：2015-04-24

    申请人： ROHM CO., LTD.

    发明人： Tomoichiro TOYAMA

    IPC分类号： H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L27/15 ,  H01L33/48 ,  H01L33/52

    CPC分类号： H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/08 ,  H01L33/486 ,  H01L33/507 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48465

    摘要： A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

    摘要翻译： 半导体发光器件包括LED芯片，其包括层叠在基板上的n型半导体层，有源层和p型半导体层。 LED芯片还包括连接到p型半导体的阳极电极和连接到n型半导体的阴极。 阳极和阴极电极面对安装有LED芯片的壳体。 壳体包括包括前表面和后表面的基底构件，以及包括在前表面形成有阳极和阴极衬垫的前表面层的布线，在后表面上形成有阳极和阴极安装电极的后表面层，阳极通过布线 连接阳极焊盘和阳极安装电极并穿过基底部件的一部分，以及通过连接阴极焊盘和阴极安装电极并穿过基底部件的一部分的布线连接阴极。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20200350478A1

    公开(公告)日：2020-11-05

    申请号：US16933756

    申请日：2020-07-20

    申请人： ROHM CO., LTD.

    发明人： Tomoichiro TOYAMA ,  Hideaki ANZAI ,  Kenya HASHIMOTO ,  Ryo YATAGAI

    IPC分类号： H01L33/62 ,  H01L33/48 ,  H01L33/24

    摘要： A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20190189878A1

    公开(公告)日：2019-06-20

    申请号：US16214990

    申请日：2018-12-10

    申请人： ROHM CO., LTD.

    发明人： Tomoichiro TOYAMA ,  Hideaki ANZAI ,  Kenya HASHIMOTO ,  Ryo YATAGAI

    IPC分类号： H01L33/62 ,  H01L33/24 ,  H01L33/48

    摘要： A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE
    6.
    发明公开
    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230378640A1

    公开(公告)日：2023-11-23

    申请号：US18322326

    申请日：2023-05-23

    申请人： ROHM CO., LTD.

    发明人： Toshikazu MUKAI ,  Jaeyoung KIM ,  Tomoichiro TOYAMA

    IPC分类号： H01Q1/38 ,  H01L23/00 ,  H01L27/06 ,  H01L23/66 ,  H01L29/88 ,  H01Q9/16

    CPC分类号： H01Q1/38 ,  H01L24/48 ,  H01L27/0676 ,  H01L23/66 ,  H01L29/882 ,  H01L2224/48225 ,  H01Q9/16 ,  H01L2223/6672 ,  H01L2223/6677

    摘要： A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230098414A1

    公开(公告)日：2023-03-30

    申请号：US17911359

    申请日：2021-02-24

    申请人： ROHM CO., LTD.

    发明人： Tomoichiro TOYAMA

    IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L33/52 ,  H01L33/62

    摘要： A semiconductor device includes: a supporting member having a wiring including a die-pad; a semiconductor element bonded to the die-pad; a wire bonded to the wiring and the semiconductor element; and a bonding layer that has a conductivity and bonds the die-pad and the semiconductor element. When viewed in a thickness direction of the semiconductor element, the die-pad includes a first region included inside a peripheral edge of the semiconductor element and a second region that is connected to the first region and extends farther then the peripheral edge of the semiconductor element. When viewed in the thickness direction, the wire is separated from the second region.