SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20170352781A1

    公开(公告)日:2017-12-07

    申请号:US15610983

    申请日:2017-06-01

    申请人: ROHM CO., LTD.

    IPC分类号: H01L33/10 H01L33/00 H01L33/32

    摘要: A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请

    公开(公告)号:US20200350478A1

    公开(公告)日:2020-11-05

    申请号:US16933756

    申请日:2020-07-20

    申请人: ROHM CO., LTD.

    IPC分类号: H01L33/62 H01L33/48 H01L33/24

    摘要: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请

    公开(公告)号:US20190189878A1

    公开(公告)日:2019-06-20

    申请号:US16214990

    申请日:2018-12-10

    申请人: ROHM CO., LTD.

    IPC分类号: H01L33/62 H01L33/24 H01L33/48

    摘要: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.