公开(公告)号：US20210233700A1

公开(公告)日：2021-07-29

申请号：US17230356

申请日：2021-04-14

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/64 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20230298805A1

公开(公告)日：2023-09-21

申请号：US18300193

申请日：2023-04-13

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/64 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L23/3107

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20170287624A1

公开(公告)日：2017-10-05

申请号：US15624205

申请日：2017-06-15

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495 ,  H01L23/64

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20150137314A1

公开(公告)日：2015-05-21

申请号：US14537234

申请日：2014-11-10

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01L49/02 ,  H01L23/552 ,  H01F27/28 ,  H01L23/31

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract translation: 本发明的半导体器件包括绝缘层，高压线圈和低压线圈，其在垂直方向上以间隔设置在绝缘层中;低电位部分设置在设置在低电压区域周围的低电压区域 高压线圈的平面图的高电压区域，并且与低于高压线圈的电位相连接;以及电场屏蔽部，其设置在高电压线圈与低电压区域之间，并且具有电浮极金属部件 。