公开(公告)号：US09035689B2

公开(公告)日：2015-05-19

申请号：US14167088

申请日：2014-01-29

Applicant: ROLLS-ROYCE PLC

Inventor： Bikramjit Bhangu ,  Mohamed Halick Mohamed Sathik ,  Sivakumar Nadarajan ,  Chandana Jayampathi Gajanayake

IPC: H03K17/14 ,  G01K7/00

CPC classification number: H03K17/145 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thermal controller for driving a gate control unit of a gate-driven semiconductor switching device, the thermal controller comprising a junction temperature estimation module for generating an estimated junction temperature for the switching device, a gate voltage control module for modifying a gate voltage of the switching device, a switching frequency control module for modifying a switching frequency of the switching device, and a duty cycle control module for modifying the duty cycle of the switching device. In use, the thermal controller is adapted to activate one of the gate voltage control module, switching frequency control module and duty cycle control module dependent upon the estimated junction temperature in order to maintain the actual junction temperature below a pre-determined limit.

Abstract translation: 一种用于驱动栅极驱动半导体开关器件的栅极控制单元的热控制器，所述热控制器包括用于产生所述开关器件的估计结温的结温估计模块，用于修改所述栅极电压的栅极电压的栅极电压控制模块 开关装置，用于修改开关装置的开关频率的开关频率控制模块，以及用于修改开关装置的占空比的占空比控制模块。 在使用中，热控制器适于根据估计的结温激活门电压控制模块，开关频率控制模块和占空比控制模块中的一个，以便将实际结温保持在预定极限以下。

公开(公告)号：US10605854B2

公开(公告)日：2020-03-31

申请号：US15596878

申请日：2017-05-16

Applicant: ROLLS-ROYCE plc

Inventor： Mohamed Halick Mohamed Sathik ,  Chandana Jayamapathi Gajanayake ,  Shantha Dharmasiri Gamini Jayasinghe ,  Amit Kumar Gupta ,  Rejeki Simanjorang

IPC: G01R31/26 ,  G01R31/327 ,  H02M3/158 ,  H02M7/217 ,  H02M7/537 ,  G01R31/40

Abstract: A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage ( dV dt ) across the switch; a rate of change of current ( di dt ) through the switch, a charge present on a gate of the switch (QG), a peak overshoot voltage (VPO) across the switch, and a peak overshoot or reverse recovery current (IRR) through the switch; and estimating the health of the switch based on the measured parameter(s).