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公开(公告)号:US11248966B2
公开(公告)日:2022-02-15
申请号:US16437371
申请日:2019-06-11
Applicant: ROLLS-ROYCE plc
Inventor: Mohamed H. M. Sathik , Rejeki Simanjorang , Chandana J. Gajanayake , Sundararajan Prasanth , Amit K. Gupta
Abstract: A system, method and machine-readable instructions for monitoring a power electronics device. The system involves a semiconductor device, at least one sensor and a processor. The processor is configured to monitor a junction temperature of the semiconductor device by determining from the at least one sensor an on-state resistance of the semiconductor device and calculating the junction temperature of the semiconductor device according to a relationship between the on-state resistance of the semiconductor device and the junction temperature of the semiconductor device. The processor may apply an ageing coefficient to the on-state resistance.
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公开(公告)号:US11287465B2
公开(公告)日:2022-03-29
申请号:US16750235
申请日:2020-01-23
Applicant: ROLLS-ROYCE plc
Inventor: Mohamed Sathik Mohamed Halick , Chandana J Gajanayake , Sundararajan Prasanth , Rejeki Simanjorang , Amit K Gupta
IPC: G01R31/26 , G01D3/08 , G01R31/42 , G01R31/27 , H02M1/00 , H03K17/082 , H03K17/689 , H03K17/78
Abstract: An operating condition monitor (100) for monitoring an operating condition of a transistor-based power converter (102), comprising: a sensing apparatus (106) configured to measure a turn-off transient energy of the power converter (102), a processor (108) in communication with the sensing apparatus (106) to receive the measurement of the turn-off transient energy, the processor being configured to: compare the measurement of the turn-off transient energy to a threshold; and issue an event signal based on the comparison to the threshold meeting a comparison criterion. A method (200, 200′) of monitoring an operating state of a transistor-based power converter is also disclosed.
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公开(公告)号:US10605854B2
公开(公告)日:2020-03-31
申请号:US15596878
申请日:2017-05-16
Applicant: ROLLS-ROYCE plc
Inventor: Mohamed Halick Mohamed Sathik , Chandana Jayamapathi Gajanayake , Shantha Dharmasiri Gamini Jayasinghe , Amit Kumar Gupta , Rejeki Simanjorang
Abstract: A method of monitoring the health of a semiconductor power electronic switch such as an insulated gate bipolar transistor (IGBT) is provided. The method having the steps of: measuring one or more parameters selected from the group consisting of: a rate of change of voltage ( dV dt ) across the switch; a rate of change of current ( di dt ) through the switch, a charge present on a gate of the switch (QG), a peak overshoot voltage (VPO) across the switch, and a peak overshoot or reverse recovery current (IRR) through the switch; and estimating the health of the switch based on the measured parameter(s).
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