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公开(公告)号：US07075807B2
公开(公告)日：2006-07-11
申请号：US10920562
申请日：2004-08-18
IPC分类号： H01L29/82
CPC分类号： H01L27/222 , G11C11/16 , H01L43/08
摘要： A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
摘要翻译： 磁阻或磁存储元件和具有一个或多个磁存储元件的磁随机存取存储器。 存储元件包括包含第一和第二磁性层的磁性隧道结。 第一磁性层具有自由磁化。 第一磁性层的自由磁化磁耦合到第一电流线和用于切换自由磁化的第二电流线，以及用于在第一和第二电流中的至少一个方向上施加静态磁偏移场的机构 线条。
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公开(公告)号：US20060038211A1
公开(公告)日：2006-02-23
申请号：US10920562
申请日：2004-08-18
IPC分类号： H01L29/94
CPC分类号： H01L27/222 , G11C11/16 , H01L43/08
摘要： A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
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3.发明授权MRAM with vertical storage element in two layer-arrangement and field sensor 失效MRAM具有垂直存储元件，在两层布置和场传感器中公开(公告)号：US07088612B2
公开(公告)日：2006-08-08
申请号：US10923639
申请日：2004-08-20
申请人： Daniel Braun , Peter Beer , Rainer Leuschner , Ulrich Klostermann
发明人： Daniel Braun , Peter Beer , Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A magnetic memory element including a magnetic storage element including two magnetic layers made of magnetic material, said two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, said two magnetic layers further having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, wherein said two magnetic layers are arranged on a same side of said at least one current line, and a magnetic sensor element including at least one magnetic layer having a magnetization vector being magnetically coupled to said magnetization vectors of said two magnetic layers of said magnetic storage element, said magnetic sensor element being electrically coupled to said at least one current line.
摘要翻译： 一种磁存储元件，包括由磁性材料制成的两个磁性层的磁存储元件，所述两个磁性层相对于彼此相对并且相对于其上形成有磁存储元件的晶片表面垂直取向，所述两个磁性层 进一步具有磁各向异性的层，而其磁化矢量磁耦合到至少一个电流线，其中所述两个磁性层布置在所述至少一条电流线的同一侧，以及包括至少一个磁性的磁性传感器元件 层，其磁化矢量磁耦合到所述磁存储元件的所述两个磁性层的所述磁化矢量，所述磁传感器元件电耦合到所述至少一条电流线。
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4.发明申请MRAM with vertical storage element in two layer-arrangement and field sensor 失效MRAM具有垂直存储元件，在两层布置和场传感器中公开(公告)号：US20060039186A1
公开(公告)日：2006-02-23
申请号：US10923639
申请日：2004-08-20
申请人： Daniel Braun , Peter Beer , Rainer Leuschner , Ulrich Klostermann
发明人： Daniel Braun , Peter Beer , Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The present invention relates to a magnetic memory element comprising a magnetic storage element comprised of two magnetic layers made of magnetic material, said two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, said two magnetic layers further having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, wherein said two magnetic layers are arranged on a same side of said at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to said magnetization vectors of said two magnetic layers of said magnetic storage element, said magnetic sensor element being electrically coupled to said at least one current line.
摘要翻译： 磁存储元件本发明涉及一种磁存储元件，它包括由磁性材料制成的两个磁性层构成的磁存储元件，所述两个磁性层相对于彼此相对并且相对于晶片表面垂直取向，在该晶片表面上磁性存储元件 所述两个磁性层进一步具有磁各向异性，而其磁化矢量磁耦合到至少一条电流线，其中所述两个磁性层布置在所述至少一条电流线的同一侧，并且磁传感器 元件包括至少一个磁性层，其磁化矢量磁耦合到所述磁存储元件的所述两个磁性层的所述磁化矢量，所述磁性传感器元件电耦合到所述至少一条电流线。
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公开(公告)号：US20060039185A1
公开(公告)日：2006-02-23
申请号：US10922434
申请日：2004-08-20
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.
摘要翻译： 公开了一种磁存储元件。 磁存储元件包括用于存储由磁性材料制成并且相对于其上形成有磁存储元件的晶片表面垂直定向的磁通孔，磁通量具有磁各向异性，其磁化矢量磁耦合到 至少一个电流线，以及包括至少一个磁性层的磁性传感器元件，所述至少一个磁性层具有与磁通孔的磁化矢量磁耦合的磁化矢量，其中所述磁性传感器元件导电连接到所述至少一条电流线。
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公开(公告)号：US07092284B2
公开(公告)日：2006-08-15
申请号：US10922434
申请日：2004-08-20
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.
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7.发明申请Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells 审中-公开电流检测放大器和可编程电阻器的参考电流源，配置有磁性隧道结电池公开(公告)号：US20060092689A1
公开(公告)日：2006-05-04
申请号：US10982026
申请日：2004-11-04
申请人： Daniel Braun , Ulrich Klostermann
发明人： Daniel Braun , Ulrich Klostermann
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C7/067 , G11C7/14 , G11C29/028 , G11C29/50 , G11C29/50008 , G11C2207/063
摘要： A reference current source for a magnetic memory device is preferably configured with magnetic tunnel junction cells and includes more than four reference magnetic memory cells to improve reliability of the magnetic memory device and to reduce sensitivity at a device level to individual cell failures. The reference current source includes a large number of magnetic memory cells coupled in an array, and a current source provides a reference current dependent on the array resistance. In another embodiment a large number of magnetic memory cells are coupled to current sources that are summed and scaled to produce a reference current source. A current comparator senses the unknown state of a magnetic memory cell. In a further embodiment, an array of magnetic memory cells is configured to provide a non-volatile, adjustable resistance. In a further embodiment, the array of magnetic memory cells is configured with a tap to provide a non-volatile, adjustable potentiometer.
摘要翻译： 用于磁存储器件的参考电流源优选地配置有磁性隧道结单元并且包括多于四个的参考磁存储器单元，以提高磁存储器件的可靠性并且降低器件级别对各个单元故障的灵敏度。 参考电流源包括以阵列耦合的大量磁存储器单元，电流源提供取决于阵列电阻的参考电流。 在另一个实施例中，大量的磁存储器单元被耦合到电流源，其被相加和缩放以产生参考电流源。 电流比较器检测磁存储单元的未知状态。 在另一个实施例中，磁存储器单元的阵列被配置成提供非易失性可调电阻。 在另一实施例中，磁存储单元的阵列配置有抽头以提供非易失性可调节的电位计。
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公开(公告)号：US20060171197A1
公开(公告)日：2006-08-03
申请号：US11045512
申请日：2005-01-31
申请人： Ulrich Klostermann , Daniel Braun
发明人： Ulrich Klostermann , Daniel Braun
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/15 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive memory element has a stacked structure including: a tunneling barrier made of non-magnetic material, a first magnetic system with a ferromagnetic tunneling junction reference layer barrier having a fixed magnetic moment vector on one side of the tunneling adjacent to the non-magnetic material, and a second magnetic system with a ferromagnetic tunneling junction free layer on an opposite side of the tunneling barrier having a free magnetic moment vector adjacent to the non-magnetic material and forming a magnetoresistive tunneling junction. The tunneling junction free layer is one of a plurality of N ferromagnetic free layers which are antiferromagnetically coupled. The first magnetic system is sandwiched in between the tunneling junction free layer and at least one of the ferromagnetic free layers that are anti-ferromagnetically coupled therewith.
摘要翻译： 磁阻存储元件具有堆叠结构，其包括：由非磁性材料制成的隧道势垒，具有铁磁隧道结参考层势垒的第一磁系统，在与非磁性相邻的隧道的一侧具有固定的磁矩矢量 材料和具有在隧道势垒的相对侧上的铁磁隧道结自由层的第二磁系统，其具有与非磁性材料相邻的自由磁矩矢量并形成磁阻隧道结。 隧道结自由层是反铁磁耦合的多个N铁磁自由层之一。 第一磁系统被夹在隧道结自由层和与其铁磁耦合的铁磁自由层中的至少一个之间。
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公开(公告)号：US20100274746A1
公开(公告)日：2010-10-28
申请号：US12665992
申请日：2008-06-23
申请人： Jörn Rickert , Carsten Mehring , Julie Blumberg , Daniel Braun , Tomislav Milekovic , Jörg Fischer
发明人： Jörn Rickert , Carsten Mehring , Julie Blumberg , Daniel Braun , Tomislav Milekovic , Jörg Fischer
CPC分类号： G06N3/02 , G06K9/00536 , G06K9/6278
摘要： Method and device for computer-aided prediction of intended movements from neuronal signals of a brain, wherein the neuronal signals are each associated in the brain with intended movements, wherein neuronal signals are recorded and the most probable movements are determined from these, specifically using a predetermined model in which a recorded neuronal signal and a determined movement are assigned to each other, and, for the probability with which a recorded neuronal signal corresponds to a respective predetermined movement, a predetermined distribution is assumed that is defined by specific characteristic values, wherein an adaptation of the neuronal signal is included in the predetermined model.
摘要翻译： 用于计算机辅助预测来自脑的神经元信号的预期运动的方法和装置，其中神经元信号各自与大脑中的预期运动相关联，其中记录神经元信号，并且从这些运动中确定最可能的运动，具体地使用 其中记录的神经元信号和确定的运动彼此分配的预定模型，并且对于记录的神经元信号对应于相应的预定移动的概率，假设由特定特征值定义的预定分布，其中 神经元信号的适应性包括在预定模型中。
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公开(公告)号：US20070121391A1
公开(公告)日：2007-05-31
申请号：US11288494
申请日：2005-11-29
申请人： Dietmar Gogl , Daniel Braun
发明人： Dietmar Gogl , Daniel Braun
IPC分类号： G11C11/00
摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a second reference cell column. A comparator is provided with a first and a second input terminal. A switching circuit is configured to connect each of the cell columns to the first input terminal and the pair of reference cell columns coupled in parallel to the second input terminal, and configured to connect the first reference cell column to the first input terminal and the second reference cell column to the second input terminal.
摘要翻译： 公开了磁存储器。 在一个实施例中，磁存储阵列包括多个单元列和一对参考单元列，包括第一参考单元列和第二参考单元列。 比较器具有第一和第二输入端。 开关电路被配置为将每个单元列连接到与第二输入端并联耦合的第一输入端和一对参考单元列，并且被配置为将第一参考单元列连接到第一输入端，而第二参考单元列 参考单元格列到第二个输入端。
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