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    THIN FILMS FOR PHOTOVOLTAIC CELLS
    2.
    发明申请
    THIN FILMS FOR PHOTOVOLTAIC CELLS 审中-公开
    光伏电池薄膜

    公开(公告)号：US20120115312A1

    公开(公告)日：2012-05-10

    申请号：US13321834

    申请日：2010-05-26

    申请人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo ,  Mahaprasad Kar

    发明人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo ,  Mahaprasad Kar

    IPC分类号： H01L21/20

    CPC分类号： H01L31/0322 ,  B82Y30/00 ,  C09D11/36 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

    摘要： In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0≦x ≦1 and 0≦y≦1. The particle layers are annealed individually or in combination to form a CIGSSe thin film having a composition profile along the depth of the film In addition, one or more of the particle layers may be also deposited on a pre-existing absorber and annealed to form a film having a composition profile along the depth of the film After depositing thin film precursor layers containing CIGSSe nanoparticles (and/or any other particles) on a suitable substrate in accordance with a desired concentration profile, a subsequent treatment under an Se and/or S containing atmosphere at elevated temperature may be used to convert the precursor layers into a CIGSSe absorber film In a further aspect, a method for forming multinary metal chalcogenide semiconductor layers directly on a substrate from a solution of precursors, includes depositing a plurality of metal chalcogenide particles onto a substrate to form a precursor film A species containing a metal, chalcogen, or combination thereof is dissolved in a solution containing one or more solvents to form a liquid chalcogen medium. The precursor film is contacted with the liquid chalcogen medium at a temperature of at least 50 C to form a multinary metal chalcogenide thin film

    摘要翻译： 一方面，用于形成CIGSSe的薄膜的方法包括在衬底上沉积至少两层颗粒。 至少一层包括具有由Cu（InI-xGax）（S1-ySey）2表示的化学组成的CIGSSe颗粒，其中0和nlE; x和nlE; 1和0＆amp; nlE; y＆nlE; 1。 颗粒层单独地或组合地退火以形成具有沿着膜的深度的组成分布的CIGSSe薄膜。此外，一个或多个颗粒层也可以沉积在预先存在的吸收体上并退火以形成 具有沿着膜深度的组成轮廓的膜根据期望的浓度分布，在合适的底物上沉积含有CIGSSe纳米颗粒（和/或任何其它颗粒）的薄膜前体层，然后在Se和/或S 可以使用高温下的含氮气氛将前体层转化为CIGSSe吸收膜。在另一方面，从前体溶液直接在基底上形成多金属硫族化物半导体层的方法包括沉积多个金属硫族化物颗粒 在基材上形成前体膜A含有金属，硫族元素或其组合的物质是溶解的 在含有一种或多种溶剂以形成液体硫属培养基的溶液中。 前体膜与液态硫属培养基在至少50℃的温度下接触以形成多元金属硫族化物薄膜

    SELENIZATION OF PRECURSOR LAYER CONTAINING CULNS2 NANOPARTICLES
    7.
    发明申请
    SELENIZATION OF PRECURSOR LAYER CONTAINING CULNS2 NANOPARTICLES 失效
    含有CULNS2纳米粒子的前驱体层的释放

    公开(公告)号：US20120122268A1

    公开(公告)日：2012-05-17

    申请号：US13145016

    申请日：2010-01-21

    申请人： Rakesh Agrawal ,  Hugh Hillhouse ,  Qijie Guo

    发明人： Rakesh Agrawal ,  Hugh Hillhouse ,  Qijie Guo

    IPC分类号： H01L31/18 ,  H01L21/36

    CPC分类号： H01L31/186 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  Y02E10/50 ,  Y02P70/521

    摘要： A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1−y)2, CuGaS2, CuGa(Sy,Se1−y)2, Cu(InxGa1−x)S2, and Cu(InxGa1−x)(Sy,Se1−y)2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 1≦y≦0.

    摘要翻译： 提供了制造用于光伏或电子应用的薄膜的方法。 该方法包括制造纳米晶体前体层并在含硒气氛中硒化纳米晶体前体层。 纳米晶体前体层包括CuInS2，CuIn（Sy，Se1-y）2，CuGaS2，CuGa（Sy，Se1-y）2，Cu（InxGa1-x）S2和Cu（InxGa1-x）（Sy，Se1 -y）2纳米颗粒及其组合，其中0＆lt; lE; x＆nlE; 1和1＆nlE; y＆nlE;