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1.发明申请公开(公告)号：US20110045621A1
公开(公告)日：2011-02-24
申请号：US12917449
申请日：2010-11-01
IPC分类号： H01L21/30
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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2.发明授权公开(公告)号：US08193019B2
公开(公告)日：2012-06-05
申请号：US12917449
申请日：2010-11-01
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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3.发明授权公开(公告)号：US07826506B2
公开(公告)日：2010-11-02
申请号：US11224615
申请日：2005-09-12
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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4.发明申请公开(公告)号：US20060072640A1
公开(公告)日：2006-04-06
申请号：US11224615
申请日：2005-09-12
申请人： Ralph Johnson , R. Penner , James Biard , Colby Fitzgerald
发明人： Ralph Johnson , R. Penner , James Biard , Colby Fitzgerald
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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