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    Vertical cavity surface emitting laser having multiple top-side contacts
    1.
    发明申请
    Vertical cavity surface emitting laser having multiple top-side contacts 有权
    具有多个顶侧触点的垂直腔面发射激光器

    公开(公告)号：US20060072640A1

    公开(公告)日：2006-04-06

    申请号：US11224615

    申请日：2005-09-12

    申请人： Ralph Johnson ,  R. Penner ,  James Biard ,  Colby Fitzgerald

    发明人： Ralph Johnson ,  R. Penner ,  James Biard ,  Colby Fitzgerald

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305

    摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.

    摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

    Vertical cavity surface emitting laser with undoped top mirror
    2.
    发明申请
    Vertical cavity surface emitting laser with undoped top mirror 有权
    垂直腔表面发射激光器与无顶顶镜

    公开(公告)号：US20060072639A1

    公开(公告)日：2006-04-06

    申请号：US11222433

    申请日：2005-09-08

    申请人： Ralph Johnson ,  R. Penner ,  James Biard

    发明人： Ralph Johnson ,  R. Penner ,  James Biard

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/3211

    摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

    摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。

    VERTICAL CAVITY SURFACE EMITTING LASER INCLUDING TRENCH AND PROTON IMPLANT ISOLATION
    3.
    发明申请
    VERTICAL CAVITY SURFACE EMITTING LASER INCLUDING TRENCH AND PROTON IMPLANT ISOLATION 有权
    垂直孔表面发射激光，包括TRENCH和PROTON植入物分离

    公开(公告)号：US20070053399A1

    公开(公告)日：2007-03-08

    申请号：US11554473

    申请日：2006-10-30

    申请人： Ralph Johnson ,  R. Penner ,  James Biard

    发明人： Ralph Johnson ,  R. Penner ,  James Biard

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305 ,  H01S5/3095

    摘要： A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.

    摘要翻译： 具有几乎平面的腔内接触的VCSEL。 在基板上形成底部DBR反射镜。 在底部DBR镜上形成第一导电层区域。 包括量子阱的有源层在第一导电层区域上。 沟槽形成有源层区域。 沟槽形成为具有为活动层区域提供机械支撑的轮辐车轮构造。 沟槽被蚀刻到第一导电层区域附近。 质子植入物被提供在货车轮中并且被配置成使得货车车轮的轮辐绝缘。 形成近似平面的电接触件作为用于将有源区域的底部连接到电源的腔内接触。 几乎平面的电接触形成在沟槽中和周围。

    Distributed bragg reflector for optoelectronic device
    5.
    发明申请
    Distributed bragg reflector for optoelectronic device 有权
    光电器件分布式布拉格反射器

    公开(公告)号：US20050190812A1

    公开(公告)日：2005-09-01

    申请号：US11119292

    申请日：2005-04-29

    申请人： Ralph Johnson ,  Klein Johnson ,  Jimmy Tatum ,  James Guenter ,  James Biard ,  Robert Hawthorne

    发明人： Ralph Johnson ,  Klein Johnson ,  Jimmy Tatum ,  James Guenter ,  James Biard ,  Robert Hawthorne

    IPC分类号： H01S5/183 ,  H01S5/42 ,  H01S3/08

    CPC分类号： H01S5/423 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3211

    摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

    摘要翻译： 本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于 第二距离。 此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。

    Electron affinity engineered VCSELs
    6.
    发明申请
    Electron affinity engineered VCSELs 有权
    电子亲和性工程VCSELs

    公开(公告)号：US20050031011A1

    公开(公告)日：2005-02-10

    申请号：US10767920

    申请日：2004-01-29

    申请人： James Biard ,  Ralph Johnson ,  Klein Johnson

    发明人： James Biard ,  Ralph Johnson ,  Klein Johnson

    IPC分类号： H01S5/028 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01S5/42 ,  H01S3/08 ,  H01S5/00

    CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/205 ,  H01S5/3211 ,  H01S5/423 ,  H01S2301/166

    摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.

    摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生更低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。

    LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION
    7.
    发明申请
    LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION 有权
    具有活动区域附近的电气限制障碍物的发光半导体器件

    公开(公告)号：US20060268954A1

    公开(公告)日：2006-11-30

    申请号：US11461353

    申请日：2006-07-31

    申请人： Ralph Johnson ,  James Biard ,  James Guenter

    发明人： Ralph Johnson ,  James Biard ,  James Guenter

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/18311 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3432

    摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

    摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。

    LED headlamp system
    8.
    发明授权
    LED headlamp system 有权
    LED头灯系统

    公开(公告)号：US08104939B2

    公开(公告)日：2012-01-31

    申请号：US11991013

    申请日：2006-08-23

    申请人： Charles M. Coushaine ,  Angela Hohl-Abichedid ,  Ralph Johnson ,  William E. Meyer ,  Thomas Reiners ,  Thomas Tessnow ,  Michael Tucker ,  Ralf Vollmer

    发明人： Charles M. Coushaine ,  Angela Hohl-Abichedid ,  Ralph Johnson ,  William E. Meyer ,  Thomas Reiners ,  Thomas Tessnow ,  Michael Tucker ,  Ralf Vollmer

    IPC分类号： F21V9/00 ,  F21V21/00 ,  F21S8/00

    CPC分类号： F21S41/24 ,  F21S41/143 ,  F21S45/47 ,  F21S48/1154 ,  F21V29/74 ,  F21Y2115/10

    摘要： A solid-state light source (10) comprising a plurality of LED units (12) arrayed to emit light generally about an axis (14). Each of the LED units (12) can comprise a number of LEDs, for example, up to five. They may all emit in a single color or multiple colors can be combined for a specific effect. A light transmissive light guide (16) is associated with the LED units (12) and has a plurality of input widows (18). Each LED unit (12) faces a respective input window (18) and each window (18) transversely intercepts the axis (14) and receives light from the LED units (12). The input windows (18) lead to a common output window (20) that is axially aligned with the input windows (18). The light guide (16) has smooth sidewalls (22) that extend between the input windows (18) and the output window (20).

    摘要翻译： 一种固态光源（10），包括排列成通常围绕轴线（14）发光的多个LED单元（12）。 每个LED单元（12）可以包括多个LED，例如多达五个。 它们都可以以单一颜色发射，或者可以组合多种颜色以获得特定的效果。 透光导光体（16）与LED单元（12）相关联并且具有多个输入寡子（18）。 每个LED单元（12）面对相应的输入窗口（18），并且每个窗口（18）横向截取轴线（14）并且接收来自LED单元（12）的光。 输入窗口（18）导致与输入窗口（18）轴向对齐的公共输出窗口（20）。 光导（16）具有在输入窗（18）和输出窗（20）之间延伸的平滑侧壁（22）。

    System and Method for Providing Power Control Fault Masking
    9.
    发明申请
    System and Method for Providing Power Control Fault Masking 有权
    提供电源控制故障屏蔽的系统和方法

    公开(公告)号：US20110231675A1

    公开(公告)日：2011-09-22

    申请号：US12724709

    申请日：2010-03-16

    申请人： Timothy M. Lambert ,  Ralph Johnson

    发明人： Timothy M. Lambert ,  Ralph Johnson

    IPC分类号： G06F1/00 ,  H02J1/00

    CPC分类号： G06F1/3203 ,  G06F11/004

    摘要： Systems and methods for reducing problems and disadvantages associated with traditional approaches to masking false faults generated by voltage regulators are provided. A method may include receiving, at a voltage regulator configured to be enabled by a power controller communicatively coupled to the voltage regulator via an enable line, a first indication from a device other than the power controller indicating that the voltage regulator is to be disabled, wherein the enable line is configured to communicate a second indication from the power controller to the voltage regulator indicating whether the voltage regulator is to be enabled. In response to receipt of the first signal, the voltage regulator may communicate to the power controller via the enable line, a third indication indicating that the voltage regulator has been disabled by a device other than the power controller.

    摘要翻译： 提供了用于减少与由电压调节器产生的伪故障的传统方法相关联的问题和缺点的系统和方法。 一种方法可包括在电压调节器处经由经由使能线通信地耦合到电压调节器的功率控制器被配置为使得能够从功率控制器之外的设备指示电压调节器被禁用的第一指示， 其中所述使能线被配置为将来自所述功率控制器的第二指示传送到所述电压调节器，以指示是否启用所述电压调节器。 响应于接收到第一信号，电压调节器可以经由使能线路与功率控制器通信，指示电压调节器已被功率控制器以外的设备禁用的第三指示。