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1.发明申请公开(公告)号：US20110045621A1
公开(公告)日：2011-02-24
申请号：US12917449
申请日：2010-11-01
IPC分类号： H01L21/30
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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2.发明授权公开(公告)号：US08193019B2
公开(公告)日：2012-06-05
申请号：US12917449
申请日：2010-11-01
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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3.发明授权公开(公告)号：US07826506B2
公开(公告)日：2010-11-02
申请号：US11224615
申请日：2005-09-12
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。
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公开(公告)号：US20120213243A1
公开(公告)日：2012-08-23
申请号：US13460725
申请日：2012-04-30
IPC分类号： H01S3/08
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.
摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成，并且周期性掺杂的导电层耦合到未掺杂的顶部次要器件。 周期性掺杂的间隔层耦合到有源区。 耦合到周期性掺杂的间隔层的未掺杂的底部小子。 第一腔内触点耦合到周期性掺杂的导电层，并且第二腔内触点耦合到周期性掺杂的间隔层。
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公开(公告)号：US07860137B2
公开(公告)日：2010-12-28
申请号：US11222433
申请日：2005-09-08
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。
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公开(公告)号：US09124069B2
公开(公告)日：2015-09-01
申请号：US13460725
申请日：2012-04-30
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.
摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成，并且周期性掺杂的导电层耦合到未掺杂的顶部次要器件。 周期性掺杂的间隔层耦合到有源区。 耦合到周期性掺杂的间隔层的未掺杂的底部小子。 第一腔内触点耦合到周期性掺杂的导电层，并且第二腔内触点耦合到周期性掺杂的间隔层。
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公开(公告)号：US08168456B2
公开(公告)日：2012-05-01
申请号：US12979248
申请日：2010-12-27
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。
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公开(公告)号：US20110090930A1
公开(公告)日：2011-04-21
申请号：US12979248
申请日：2010-12-27
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。
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9.发明授权Vertical cavity surface emitting laser including trench and proton implant isolation 有权垂直腔表面发射激光器包括沟槽和质子注入隔离公开(公告)号：US07346090B2
公开(公告)日：2008-03-18
申请号：US11554473
申请日：2006-10-30
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305 , H01S5/3095
摘要： A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
摘要翻译： 具有几乎平面的腔内接触的VCSEL。 在基板上形成底部DBR反射镜。 在底部DBR镜上形成第一导电层区域。 包括量子阱的有源层在第一导电层区域上。 沟槽形成有源层区域。 沟槽形成为具有为活动层区域提供机械支撑的轮辐车轮构造。 沟槽被蚀刻到第一导电层区域附近。 质子植入物被提供在货车轮中并且被配置成使得货车车轮的轮辐绝缘。 形成近似平面的电接触件作为用于将有源区域的底部连接到电源的腔内接触。 几乎平面的电接触形成在沟槽中和周围。
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