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公开(公告)号：US08598043B2
公开(公告)日：2013-12-03
申请号：US12886459
申请日：2010-09-20
IPC分类号： H01L21/302
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/76232 , H01L27/105 , H01L27/1052
摘要： The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to form a first opening having a first width. The first opening is narrowed with a conformal layer of carbon-containing material. The conformal layer is punched through to expose substrate along a bottom of the narrowed opening. The exposed substrate is removed to form a second opening which joins to the first opening, and which has a second width less than the first width. The carbon-containing material is then removed from within the first opening, and electrically insulative material is formed within the first and second openings. The electrically insulative material can substantially fill the first opening, and leave a void within the second opening.
摘要翻译： 本发明包括形成用于半导体结构的隔离区域的方法。 可以在半导体衬底上形成并图案化硬掩模，其中图案化的硬掩模暴露衬底的区域。 可以蚀刻这样的暴露区域以形成具有第一宽度的第一开口。 第一个开口用含碳材料的共形层变窄。 穿过保形层以沿着狭窄的开口的底部露出衬底。 去除暴露的衬底以形成连接到第一开口的第二开口，并且具有小于第一宽度的第二宽度。 然后从第一开口内去除含碳材料，并且在第一和第二开口内形成电绝缘材料。 电绝缘材料可以基本上填充第一开口，并在第二开口内留下空隙。
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公开(公告)号：US07799694B2
公开(公告)日：2010-09-21
申请号：US11402659
申请日：2006-04-11
IPC分类号： H01L21/302
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/76232 , H01L27/105 , H01L27/1052
摘要： The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to form a first opening having a first width. The first opening is narrowed with a conformal layer of carbon-containing material. The conformal layer is punched through to expose substrate along a bottom of the narrowed opening. The exposed substrate is removed to form a second opening which joins to the first opening, and which has a second width less than the first width. The carbon-containing material is then removed from within the first opening, and electrically insulative material is formed within the first and second openings. The electrically insulative material can substantially fill the first opening, and leave a void within the second opening.
摘要翻译： 本发明包括形成用于半导体结构的隔离区域的方法。 可以在半导体衬底上形成并图案化硬掩模，其中图案化的硬掩模暴露衬底的区域。 可以蚀刻这样的暴露区域以形成具有第一宽度的第一开口。 第一个开口用含碳材料的共形层变窄。 穿过保形层以沿着狭窄的开口的底部露出衬底。 去除暴露的衬底以形成连接到第一开口的第二开口，并且具有小于第一宽度的第二宽度。 然后从第一开口内去除含碳材料，并且在第一和第二开口内形成电绝缘材料。 电绝缘材料可以基本上填充第一开口，并在第二开口内留下空隙。
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公开(公告)号：US20110008970A1
公开(公告)日：2011-01-13
申请号：US12886459
申请日：2010-09-20
IPC分类号： H01L21/31
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/76232 , H01L27/105 , H01L27/1052
摘要： The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to form a first opening having a first width. The first opening is narrowed with a conformal layer of carbon-containing material. The conformal layer is punched through to expose substrate along a bottom of the narrowed opening. The exposed substrate is removed to form a second opening which joins to the first opening, and which has a second width less than the first width. The carbon-containing material is then removed from within the first opening, and electrically insulative material is formed within the first and second openings The electrically insulative material can substantially fill the first opening, and leave a void within the second opening.
摘要翻译： 本发明包括形成用于半导体结构的隔离区域的方法。 可以在半导体衬底上形成并图案化硬掩模，其中图案化的硬掩模暴露衬底的区域。 可以蚀刻这样的暴露区域以形成具有第一宽度的第一开口。 第一个开口用含碳材料的共形层变窄。 穿过保形层以沿着狭窄的开口的底部露出衬底。 去除暴露的衬底以形成连接到第一开口的第二开口，并且具有小于第一宽度的第二宽度。 然后从第一开口内去除含碳材料，并且电绝缘材料形成在第一和第二开口内。电绝缘材料可以基本上填充第一开口，并在第二开口内留下空隙。
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4.发明申请Methods of Forming High Density Structures and Low Density Structures with a Single Photomask 有权用单一光掩模形成高密度结构和低密度结构的方法公开(公告)号：US20120238077A1
公开(公告)日：2012-09-20
申请号：US13485869
申请日：2012-05-31
IPC分类号： H01L21/302 , H01L21/20
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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公开(公告)号：US20100295114A1
公开(公告)日：2010-11-25
申请号：US12851896
申请日：2010-08-06
IPC分类号： H01L29/788
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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公开(公告)号：US07790360B2
公开(公告)日：2010-09-07
申请号：US11714378
申请日：2007-03-05
IPC分类号： H01L21/00
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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7.发明授权Methods of forming high density structures and low density structures with a single photomask 有权用单个光掩模形成高密度结构和低密度结构的方法公开(公告)号：US08431456B2
公开(公告)日：2013-04-30
申请号：US13485869
申请日：2012-05-31
IPC分类号： H01L21/336
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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公开(公告)号：US08207570B2
公开(公告)日：2012-06-26
申请号：US12851896
申请日：2010-08-06
IPC分类号： H01L29/788
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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9.发明申请Semiconductor constructions, methods of forming multiple lines, and methods of forming high density structures and low density structures with a single photomask 有权半导体结构，形成多条线的方法，以及用单个光掩模形成高密度结构和低密度结构的方法公开(公告)号：US20080220600A1
公开(公告)日：2008-09-11
申请号：US11714378
申请日：2007-03-05
IPC分类号： H01L21/20
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译： 一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。 聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。 在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。 聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。
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公开(公告)号：US08030217B2
公开(公告)日：2011-10-04
申请号：US12771951
申请日：2010-04-30
IPC分类号： H01L21/302
CPC分类号： H01L27/04 , H01L21/0338 , H01L21/3088 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
摘要翻译： 一种用于制造半导体器件的方法包括对一层光致抗蚀剂材料进行构图以形成多个心轴。 该方法还包括通过原子层沉积（ALD）工艺在多个心轴上沉积氧化物材料。 该方法还包括从暴露的水平表面各向异性地蚀刻氧化物材料。 该方法还包括选择性地蚀刻光刻胶材料。
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