-
1.发明申请FLOAT ZONE SILICON WAFER MANUFACTURING SYSTEM AND RELATED PROCESS 审中-公开FLOAT ZONE SILICON WAFER制造系统及相关流程公开(公告)号：US20170069482A1
公开(公告)日：2017-03-09
申请号：US15354957
申请日：2016-11-17
申请人： Rayton Solar Inc.
IPC分类号： H01L21/02 , H01L21/263 , C30B33/02 , C30B13/20 , C30B29/06
CPC分类号： H01L21/02035 , B28D5/00 , C30B13/20 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/02 , C30B33/06 , H01L21/263 , Y10T117/1088
摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
摘要翻译： 用于制造硅晶片的工艺包括用于安装用于剥离的浮动区硅工件的步骤，为微波装置通电以产生足以穿透浮动区硅工件的外表面层的通电束，使外表面层 具有通电束的浮区硅工件，并且将硅剥离的外表面层从浮区硅工件中去除，其厚度小于100微米。
-
公开(公告)号：US10811245B2
公开(公告)日：2020-10-20
申请号：US15354957
申请日：2016-11-17
申请人： Rayton Solar Inc.
IPC分类号： H01L21/02 , C30B13/20 , C30B13/24 , C30B29/06 , C30B29/64 , B28D5/00 , C30B33/06 , C30B33/02 , H01L21/263
摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
-
公开(公告)号：US20170092463A1
公开(公告)日：2017-03-30
申请号：US15376455
申请日：2016-12-12
申请人： Rayton Solar Inc.
IPC分类号： H01J37/31 , H01J37/20 , H01J37/305
CPC分类号： H01J37/31 , B28D5/00 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/06 , H01J37/20 , H01J37/305 , H01J2237/002 , H01L31/1804 , H01L31/184 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10T117/1088
摘要： The process for manufacturing a semiconductor wafer includes steps for mounting a semiconductor work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the semiconductor work piece, exfoliating the outer surface layer of the semiconductor work piece with the energized beam, and removing the exfoliated outer surface layer from the semiconductor work piece as the semiconductor wafer having a thickness less than 100 micrometers.
-
公开(公告)号：US09499921B2
公开(公告)日：2016-11-22
申请号：US14625544
申请日：2015-02-18
申请人： Rayton Solar Inc.
CPC分类号： H01L21/02035 , B28D5/00 , C30B13/20 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/02 , C30B33/06 , H01L21/263 , Y10T117/1088
摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
摘要翻译： 用于制造硅晶片的工艺包括用于安装用于剥离的浮动区硅工件的步骤，为微波装置通电以产生足以穿透浮动区硅工件的外表面层的通电束，使外表面层 具有通电束的浮区硅工件，并且将硅剥离的外表面层从浮区硅工件中去除，其厚度小于100微米。
-
5.发明申请FLOAT ZONE SILICON WAFER MANUFACTURING SYSTEM AND RELATED PROCESS 有权FLOAT ZONE SILICON WAFER制造系统及相关流程公开(公告)号：US20150159298A1
公开(公告)日：2015-06-11
申请号：US14625544
申请日：2015-02-18
申请人： Rayton Solar Inc.
CPC分类号： H01L21/02035 , B28D5/00 , C30B13/20 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/02 , C30B33/06 , H01L21/263 , Y10T117/1088
摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
摘要翻译： 用于制造硅晶片的工艺包括用于安装用于剥离的浮动区硅工件的步骤，为微波装置通电以产生足以穿透浮动区硅工件的外表面层的通电束，使外表面层 具有通电束的浮区硅工件，并且将硅剥离的外表面层从浮区硅工件中去除，其厚度小于100微米。
-
-
-
-
搜索结果
5 条记录 (耗时 0.01 秒)
