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公开(公告)号：US20170033710A1
公开(公告)日：2017-02-02
申请号：US15194624
申请日：2016-06-28
发明人： Kuniharu MUTO , Koji BANDO , Takamitsu KANAZAWA , Ryo KANDA , Akihiro TAMURA , Hirobumi MINEGISHI
IPC分类号： H02M7/537 , H03K17/567 , H01L23/495 , H01L23/04 , H01L27/06 , H02M7/00
CPC分类号： H02M7/537 , H01L23/04 , H01L23/3107 , H01L23/49541 , H01L27/0664 , H01L2224/0603 , H01L2224/32245 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4903 , H01L2224/73265 , H01L2224/92247 , H01L2924/181 , H02M7/003 , H02M7/53875 , H01L2924/00012 , H01L2924/00
摘要： Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.
摘要翻译： 提高了半导体器件的可靠性。 其上形成有控制电路的第三半导体芯片，并且多个IGBT芯片的第一半导体芯片经由高侧继电器板电连接。 也就是说，第一半导体芯片和第三半导体芯片经由第一线，高侧继电器板和第二线电连接。 类似地，其上形成有控制电路的第三半导体芯片和多个IGBT芯片的第二半导体芯片经由低侧继电器板电连接。 也就是说，第二半导体芯片和第三半导体芯片经由第一线，低侧继电器板和第二线电连接。
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公开(公告)号：US20180138828A1
公开(公告)日：2018-05-17
申请号：US15867978
申请日：2018-01-11
发明人： Kuniharu MUTO , Koji BANDO , Takamitsu KANAZAWA , Ryo KANDA , Akihiro TAMURA , Hirobumi MINEGISHI
CPC分类号： H02M7/537 , H01L23/04 , H01L23/3107 , H01L23/49541 , H01L27/0664 , H01L2224/0603 , H01L2224/32245 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4903 , H01L2224/73265 , H01L2224/92247 , H01L2924/181 , H02M7/003 , H02M7/53875 , H01L2924/00012 , H01L2924/00
摘要： Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.
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