公开(公告)号：US09632119B2

公开(公告)日：2017-04-25

申请号：US14475623

申请日：2014-09-03

Applicant: Renesas Electronics Corporation

Inventor： Takatsugu Nemoto ,  Yasutaka Nakashiba ,  Takasuke Hashimoto ,  Shinichi Uchida ,  Kazunori Go ,  Hiroshi Oe ,  Noriko Yoshikawa

IPC: G01R21/00 ,  H01F21/00 ,  G01R15/18

CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01L23/5286 ,  H01L28/10

Abstract: A sensor device includes a printed circuit board, a power line, a first semiconductor device, and a second semiconductor device. The first semiconductor device includes a first inductor, and the second semiconductor device includes a second inductor. Each inductor is formed using an interconnect layer. The power line extends between the two inductors without overlapping the first and second inductor, when viewed from a direction perpendicular to a main surface of the printed circuit board.

公开(公告)号：US09875962B2

公开(公告)日：2018-01-23

申请号：US15456976

申请日：2017-03-13

Applicant: Renesas Electronics Corporation

Inventor： Takatsugu Nemoto ,  Yasutaka Nakashiba ,  Takasuke Hashimoto ,  Shinichi Uchida ,  Kazunori Go ,  Hiroshi Oe ,  Noriko Yoshikawa

IPC: G01R33/06 ,  H01L23/522 ,  H01F27/28 ,  H01L49/02 ,  H01L23/528 ,  G01R31/26

CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01L23/5286 ,  H01L28/10

Abstract: A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.