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公开(公告)号：US20190244855A1
公开(公告)日：2019-08-08
申请号：US16385317
申请日：2019-04-16
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L21/768 , H01L23/532 , H01L23/485 , H01L23/528 , H01L23/522
CPC分类号： H01L21/76811 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20150235962A1
公开(公告)日：2015-08-20
申请号：US14702507
申请日：2015-05-01
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L23/532 , H01L23/528
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20180047620A1
公开(公告)日：2018-02-15
申请号：US15727671
申请日：2017-10-09
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L21/768 , H01L23/528 , H01L23/522 , H01L23/485 , H01L23/532 , H01L21/314
CPC分类号： H01L23/53295 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20170011994A1
公开(公告)日：2017-01-12
申请号：US15272553
申请日：2016-09-22
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L23/528 , H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US20140312499A1
公开(公告)日：2014-10-23
申请号：US14320049
申请日：2014-06-30
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L23/522 , H01L23/528
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20140091468A1
公开(公告)日：2014-04-03
申请号：US14095817
申请日：2013-12-03
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L23/532
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US20190035678A1
公开(公告)日：2019-01-31
申请号：US16137972
申请日：2018-09-21
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L21/768 , H01L23/532 , H01L23/485 , H01L23/522 , H01L23/528
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20170200637A1
公开(公告)日：2017-07-13
申请号：US15469730
申请日：2017-03-27
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASAKI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L23/528
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20130224947A1
公开(公告)日：2013-08-29
申请号：US13862268
申请日：2013-04-12
发明人： Junji NOGUCHI , Takayuki OSHIMA , Noriko MIURA , Kensuke ISHIKAWA , Tomio IWASKAI , Kiyomi KATSUYAMA , Tatsuyuki SAITO , Tsuyoshi TAMARU , Hizuru YAMAGUCHI
IPC分类号： H01L21/768
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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