公开(公告)号：US09508842B2

公开(公告)日：2016-11-29

申请号：US14960431

申请日：2015-12-06

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Miyake ,  Tatsuo Nakayama

IPC: H01L29/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L23/29 ,  H01L29/861 ,  H01L23/31

CPC classification number: H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with a gate insulating film in between, the first opening running up to the middle of the channel layer through the barrier layer. The concentration of two-dimensional electron gas in a first region on either side of a second opening that will have a channel is controlled to be lower than the concentration of two-dimensional electron gas in a second region between an end of the first region and a source or drain electrode. The concentration of the two-dimensional electron gas in the first region is thus decreased, thereby the conduction band-raising effect of polarization charge is prevented from being reduced. This prevents a decrease in threshold potential, and thus improves normally-off operability.

Abstract translation: 半导体器件包括衬底上的缓冲层，沟道层，阻挡层和玛瑙电极，栅电极设置在第一开口中，栅极绝缘膜在其间，第一开口延伸到 通道层穿过阻挡层。 在具有通道的第二开口的任一侧的第一区域中的二维电子气的浓度被控制为低于在第一区域的端部与第二区域的端部之间的第二区域中的二维电子气体的浓度 源极或漏极。 因此，第一区域中的二维电子气的浓度降低，从而防止极化电荷的导带效应降低。 这防止了阈值电位的降低，从而提高了常态可操作性。

公开(公告)号：US09831339B2

公开(公告)日：2017-11-28

申请号：US15632663

申请日：2017-06-26

Applicant: Renesas Electronics Corporation

Inventor： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Ichiro Masumoto ,  Yasuhiro Okamoto ,  Shinichi Miyake ,  Hiroshi Kawaguchi

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L29/1066 ,  H01L29/1083 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7783

Abstract: The characteristics of a semiconductor device are improved. A semiconductor device has a potential fixed layer containing a p type impurity, a channel layer, and a barrier layer, formed over a substrate, and a gate electrode arranged in a trench penetrating through the barrier layer, and reaching some point of the channel layer via a gate insulation film. Source and drain electrodes are formed on opposite sides of the gate electrode. The p type impurity-containing potential fixed layer has an inactivated region containing an inactivating element such as hydrogen between the gate and drain electrodes. Thus, while raising the p type impurity (acceptor) concentration of the potential fixed layer on the source electrode side, the p type impurity of the potential fixed layer is inactivated on the drain electrode side. This can improve the drain-side breakdown voltage while providing a removing effect of electric charges by the p type impurity.

公开(公告)号：US09722062B2

公开(公告)日：2017-08-01

申请号：US14837053

申请日：2015-08-27

Applicant: Renesas Electronics Corporation

Inventor： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Ichiro Masumoto ,  Yasuhiro Okamoto ,  Shinichi Miyake ,  Hiroshi Kawaguchi

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/207 ,  H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/40 ,  H01L29/417 ,  H01L29/10

CPC classification number: H01L29/7827 ,  H01L29/1066 ,  H01L29/1083 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7783

Abstract: The characteristics of a semiconductor device are improved. A semiconductor device has a potential fixed layer containing a p type impurity, a channel layer, and a barrier layer, formed over a substrate, and a gate electrode arranged in a trench penetrating through the barrier layer, and reaching some point of the channel layer via a gate insulation film. Source and drain electrodes are formed on opposite sides of the gate electrode. The p type impurity-containing potential fixed layer has an inactivated region containing an inactivating element such as hydrogen between the gate and drain electrodes. Thus, while raising the p type impurity (acceptor) concentration of the potential fixed layer on the source electrode side, the p type impurity of the potential fixed layer is inactivated on the drain electrode side. This can improve the drain-side breakdown voltage while providing a removing effect of electric charges by the p type impurity.

公开(公告)号：US10084077B2

公开(公告)日：2018-09-25

申请号：US15818638

申请日：2017-11-20

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Miyake ,  Tatsuo Nakayama

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L29/20 ,  H01L23/31 ,  H01L29/43 ,  H01L23/29 ,  H01L29/861

CPC classification number: H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with agate insulating film in between, the first opening running up to the middle of the channel layer through the barrier layer. The concentration of two-dimensional electron gas in a first region on either side of a second opening that will have a channel is controlled to be lower than the concentration of two-dimensional electron gas in a second region between an end of the first region and a source or drain electrode. The concentration of the two-dimensional electron gas in the first region is thus decreased, thereby the conduction band-raising effect of polarization charge is prevented from being reduced. This prevents a decrease in threshold potential, and thus improves normally-off operability.

公开(公告)号：US09837524B2

公开(公告)日：2017-12-05

申请号：US15340956

申请日：2016-11-01

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Miyake ,  Tatsuo Nakayama

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/20 ,  H01L23/29 ,  H01L29/861 ,  H01L23/31 ,  H01L29/43

CPC classification number: H01L29/7787 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with agate insulating film in between, the first opening running up to the middle of the channel layer through the barrier layer. The concentration of two-dimensional electron gas in a first region on either side of a second opening that will have a channel is controlled to be lower than the concentration of two-dimensional electron gas in a second region between an end of the first region and a source or drain electrode. The concentration of the two-dimensional electron gas in the first region is thus decreased, thereby the conduction band-raising effect of polarization charge is prevented from being reduced. This prevents a decrease in threshold potential, and thus improves normally-off operability.

公开(公告)号：US10050142B2

公开(公告)日：2018-08-14

申请号：US15789191

申请日：2017-10-20

Applicant: Renesas Electronics Corporation

Inventor： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Ichiro Masumoto ,  Yasuhiro Okamoto ,  Shinichi Miyake ,  Hiroshi Kawaguchi

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/20

Abstract: The characteristics of a semiconductor device are improved. A semiconductor device has a potential fixed layer containing a p type impurity, a channel layer, and a barrier layer, formed over a substrate, and a gate electrode arranged in a trench penetrating through the barrier layer, and reaching some point of the channel layer via a gate insulation film. Source and drain electrodes are formed on opposite sides of the gate electrode. The p type impurity-containing potential fixed layer has an inactivated region containing an inactivating element such as hydrogen between the gate and drain electrodes. Thus, while raising the p type impurity (acceptor) concentration of the potential fixed layer on the source electrode side, the p type impurity of the potential fixed layer is inactivated on the drain electrode side. This can improve the drain-side breakdown voltage while providing a removing effect of electric charges by the p type impurity.